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Experimental study of lightweight radiant floor Heating system with non-full-coverage Heat-conducting plate.
- Published in:
- Journal of Southeast University / Dongnan Daxue Xuebao, 2022, v. 52, n. 6, p. 1104, doi. 10.3969/j.issn.1001-0505.2022.06.010
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- Article
Micro-Raman spectroscopy observation of field-induced strain relaxation in AlGaN/GaN heterojunction field-effect transistors.
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- Physica Status Solidi. A: Applications & Materials Science, 2012, v. 209, n. 6, p. 1174, doi. 10.1002/pssa.201127553
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- Article
High-frequency InAIN/GaN HFET with f<sub>max</sub> over 400 GHz.
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- Electronics Letters (Wiley-Blackwell), 2018, v. 54, n. 12, p. 783, doi. 10.1049/el.2018.0247
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- Article
High‐frequency InAlN/GaN HFET with f<sub>max</sub> over 400 GHz.
- Published in:
- Electronics Letters (Wiley-Blackwell), 2018, v. 54, n. 12, p. 783, doi. 10.1049/el.2018.0247
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- Article
GaN planar Schottky barrier diode with cut-off frequency of 902 GHz.
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- Electronics Letters (Wiley-Blackwell), 2016, v. 52, n. 16, p. 1408, doi. 10.1049/el.2016.1937
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- Article
GaN planar Schottky barrier diode with cut‐off frequency of 902 GHz.
- Published in:
- Electronics Letters (Wiley-Blackwell), 2016, v. 52, n. 16, p. 1408, doi. 10.1049/el.2016.1937
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- Article
High-frequency AlGaN/GaN HFETs with f<sub>T</sub>/f<sub>max</sub> of 149/263 GHz for D-band PA applications.
- Published in:
- Electronics Letters (Wiley-Blackwell), 2016, v. 52, n. 15, p. 1340, doi. 10.1049/el.2016.1241
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- Article
High‐frequency AlGaN/GaN HFETs with f<sub>T</sub>/f<sub>max</sub> of 149/263 GHz for D‐band PA applications.
- Published in:
- Electronics Letters (Wiley-Blackwell), 2016, v. 52, n. 14, p. 1340, doi. 10.1049/el.2016.1241
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- Publication type:
- Article
Lateral AlGaN/GaN diode with MIS-gated hybrid anode for high-sensitivity zero-bias microwave detection.
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- Electronics Letters (Wiley-Blackwell), 2015, v. 51, n. 23, p. 1889, doi. 10.1049/el.2015.2885
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- Article
Lateral AlGaN/GaN diode with MIS‐gated hybrid anode for high‐sensitivity zero‐bias microwave detection.
- Published in:
- Electronics Letters (Wiley-Blackwell), 2015, v. 51, n. 24, p. 1889, doi. 10.1049/el.2015.2885
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- Publication type:
- Article