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Monolithically integrated avalanche photodiode receiver in 0.35 µm bipolar complementary metal oxide semiconductor.
- Published in:
- Optical Engineering, 2015, v. 54, n. 11, p. 1, doi. 10.1117/1.OE.54.11.110502
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- Article
Thick detection zone single-photon avalanche diode fabricated in 0.35 µm complementary metal-oxide semiconductors.
- Published in:
- Optical Engineering, 2015, v. 54, n. 5, p. 1, doi. 10.1117/1.OE.54.5.050503
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- Publication type:
- Article
pn photodiode in 0.35-µm high-voltage CMOS with 1.2-GHz bandwidth.
- Published in:
- Optical Engineering, 2014, v. 53, n. 11, p. 1, doi. 10.1117/1.OE.53.11.116114
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- Publication type:
- Article
Avalanche photodiode with high responsivity in 0.35 µm CMOS.
- Published in:
- Optical Engineering, 2014, v. 53, n. 4, p. 1, doi. 10.1117/1.OE.53.4.043105
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- Article