Found: 5
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Characterization of tunable band gap aluminum indium oxide films prepared on SiO (0001) by MOCVD.
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- Journal of Materials Science: Materials in Electronics, 2016, v. 27, n. 1, p. 599, doi. 10.1007/s10854-015-3794-5
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- Article
Effect of Sn content on the structural and photoelectric properties of IATO films.
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- Journal of Materials Science, 2017, v. 52, n. 1, p. 367, doi. 10.1007/s10853-016-0337-2
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- Article
Preparation and characterization of Sn-doped β-GaO homoepitaxial films by MOCVD.
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- Journal of Materials Science, 2015, v. 50, n. 8, p. 3252, doi. 10.1007/s10853-015-8893-4
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- Article
Electric Field-Modulated Surface Enhanced Raman Spectroscopy by PVDF/Ag Hybrid.
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- Scientific Reports, 2020, v. 10, n. 1, p. 1, doi. 10.1038/s41598-020-62251-0
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- Article
Fabrication and optoelectronic properties of Ga2O3/Eu epitaxial films on nanoporous GaN distributed Bragg reflectors.
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- Journal of Materials Science, 2020, v. 55, n. 19, p. 8231, doi. 10.1007/s10853-020-04600-y
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- Article