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Influence of the Finite-Size Effect on the Cluster Ion Emission of Silicon Nanostructures.
Published in:
JETP Letters, 2020, v. 112, n. 3, p. 467, doi. 10.1134/S0021364020080123
By:
- Tolstoguzov, A. B.;
- Drozdov, M. N.;
- Ieshkin, A. E.;
- Tatarintsev, A. A.;
- Myakon'kikh, A. V.;
- Belykh, S. F.;
- Korobeishchikov, N. G.;
- Pelenovich, V. O.;
- Fu, D. J.
Publication type:
Article
Influence of the Finite-Size Effect on the Cluster Ion Emission of Silicon Nanostructures.
Published in:
JETP Letters, 2020, v. 111, n. 8, p. 467, doi. 10.1134/S0021364020080123
By:
- Tolstoguzov, A. B.;
- Drozdov, M. N.;
- Ieshkin, A. E.;
- Tatarintsev, A. A.;
- Myakon'kikh, A. V.;
- Belykh, S. F.;
- Korobeishchikov, N. G.;
- Pelenovich, V. O.;
- Fu, D. J.
Publication type:
Article
Development of Software-Controlled Systems for Monitoring Physical Parameters of Nuclear Research Reactor Radiation.
Published in:
Physics of Atomic Nuclei, 2018, v. 81, n. 11, p. 1606, doi. 10.1134/S1063778818100149
By:
- Pikulina, G. N.;
- Ovchinnikov, M. A.;
- Yukhnevich, V. A.;
- Koshelev, A. S.;
- Drozdov, Yu. M.;
- Raspopov, N. V.;
- Majornikov, V. S.;
- Pickorskiy, I. M.
Publication type:
Article
High-Sensitivity Fast Neutron Detector KNK-2-8M.
Published in:
Physics of Atomic Nuclei, 2017, v. 80, n. 8, p. 1348, doi. 10.1134/S1063778817080105
By:
- Koshelev, A. S.;
- Dovbysh, L. Ye.;
- Ovchinnikov, M. A.;
- Pikulina, G. N.;
- Drozdov, Yu. M.;
- Chuklyaev, S. V.;
- Pepyolyshev, Yu. N.
Publication type:
Article
Relaxation Process in Crude Oil after Ultrasonic Treatment.
Published in:
International Journal of Engineering Transactions B: Applications, 2024, v. 37, n. 5, p. 896, doi. 10.5829/ije.2024.37.05b.08
By:
- Baimukhametov, G. F.;
- Dengaev, A. V.;
- Safiullina, E. U.;
- Kayumov, A. A.;
- Drozdov, I. M.;
- Shishulin, V. V.;
- Boushra, A.;
- Vakhin, A. V.;
- Sargin, B. V.;
- Sidibe, M. S.
Publication type:
Article
Unveiling the Potential of Cavitation Erosion-Induced Heavy Crude Oil Upgrading.
Published in:
Fluids, 2023, v. 8, n. 10, p. 274, doi. 10.3390/fluids8100274
By:
- Baimukhametov, Gadel F.;
- Kayumov, Aydar A.;
- Dengaev, Aleksey V.;
- Maksimenko, Alexander F.;
- Marakov, Denis A.;
- Shishulin, Vladimir A.;
- Drozdov, Ilya M.;
- Samuylova, Larisa V.;
- Getalov, Andrey A.;
- Aliev, Firdavs A.;
- Vakhin, Alexey V.
Publication type:
Article
SCRAP METAL PROCUREMENT AND OPERATIONS WITH IT: TODAY'S CRIMINAL SITUATION.
Published in:
Scientific Bulletin of National Mining University, 2021, n. 4, p. 145, doi. 10.33271/nvngu/2021-4/145
By:
- Lysenko, A. N.;
- Shendryk, V. V.;
- Cherevko, K. O.;
- Drozdov, O. M.;
- Piadyshev, V. H.
Publication type:
Article
Polymorphism in chalcogenides of alkaline-earth metals.
Published in:
Semiconductor Physics, Quantum Electronics & Optoelectronics, 2005, v. 8, n. 4, p. 115
By:
- Drozdov, V. A.;
- Pozhivatenko, V. V.;
- Drozdov, M. A.;
- V.V. Kovalchuk;
- Moiseev, L. M.;
- Moiseeva, V. O.
Publication type:
Article
Relaxation Process in Crude Oil after Ultrasonic Treatment.
Published in:
International Journal of Engineering Transactions C: Aspects, 2024, v. 37, n. 5, p. 896, doi. 10.5829/ije.2024.37.05b.08
By:
- Baimukhametov, G. F.;
- Dengaev, A. V.;
- Safiullina, E. U.;
- Kayumov, A. A.;
- Drozdov, I. M.;
- Shishulin, V. V.;
- Boushra, A.;
- Vakhin, A. V.;
- Sargin, B. V.;
- Sidibe, M. S.
Publication type:
Article
A comprehensive structural analysis of silicon carbide layers grown by vacuum epitaxy on silicon from hydrides and hydrocarbons.
Published in:
Journal of Structural Chemistry, 2010, v. 51, p. 145, doi. 10.1007/s10947-010-0204-y
By:
- Orlov, L.;
- Drozdov, Yu.;
- Drozdov, M.;
- Pod'yacheva, O.;
- Vdovin, V.
Publication type:
Article
28SiO2-Based Isotopically Enriched Silica Fiber.
Published in:
Inorganic Materials, 2023, v. 59, n. 6, p. 591, doi. 10.1134/S0020168523060158
By:
- Troshin, O. Yu.;
- Bulanov, A. D.;
- Salgansky, M. Yu.;
- Timofeev, O. V.;
- Komshina, M. E.;
- Shumovskaya, K. F.;
- Tomashuk, A. L.;
- Kashaykin, P. F.;
- Drozdov, M. N.
Publication type:
Article
Isotope-modified silicon layers obtained by plasma enhanced chemical vapor deposition from gaseous silicon tetrafluoride.
Published in:
Technical Physics Letters, 2009, v. 35, n. 10, p. 948, doi. 10.1134/S1063785009100216
By:
- Sennikov, P. G.;
- Golubev, S. V.;
- Shashkin, V. I.;
- Pryakhin, D. A.;
- Drozdov, M. N.;
- Andreev, B. A.;
- Pohl, H.-J.;
- Godisov, O. N.
Publication type:
Article
Room-temperature photoconductivity in the 1–2.6 µm range in InAs/GaAs heterostructures with quantum dots.
Published in:
Technical Physics Letters, 2008, v. 34, n. 1, p. 1, doi. 10.1134/S106378500801001X
By:
- Drozdov, M. N.;
- Danil'tsev, V. M.;
- Moldavskaya, L. D.;
- Shashkin, V. I.
Publication type:
Article
Electron Transport Effects in the IR Photoconductivity of InGaAs/GaAs Structures with Quantum Dots.
Published in:
Technical Physics Letters, 2004, v. 30, n. 9, p. 795, doi. 10.1134/1.1804599
By:
- Danil'tsev, V. M.;
- Drozdov, M. N.;
- Moldavskaya, L. D.;
- Shashkin, V. I.;
- Germanenko, A. V.;
- Min'ko, G. M.;
- Sherstobitov, A. A.
Publication type:
Article
A New Method for Determining the Sharpness of InGaAs/GaAs Heterojunctions by Auger Depth Profiling.
Published in:
Technical Physics Letters, 2001, v. 27, n. 10, p. 868, doi. 10.1134/1.1414559
By:
- Drozdov, M. N.;
- Danil’tsev, V. M.;
- Drozdov, Yu. N.;
- Khrykin, O. I.;
- Shashkin, V. I.
Publication type:
Article
Subnanometer Resolution in Depth Profiling Using Glancing Auger Electrons.
Published in:
Technical Physics Letters, 2001, v. 27, n. 2, p. 114, doi. 10.1134/1.1352765
By:
- Drozdov, M. N.;
- Danil’tsev, V. M.;
- Drozdov, Yu. N.;
- Khrykin, O. I.;
- Shashkin, V. I.
Publication type:
Article
Single-Crystalline GaAs, AlGaAs, and InGaAs Layers Grown by Metalorganic VPE on Porous GaAs Substrates.
Published in:
Technical Physics Letters, 2000, v. 26, n. 4, p. 298, doi. 10.1134/1.1262823
By:
- Buzynin, Yu. N.;
- Gusev, S. A.;
- Danil’tsev, V. M.;
- Drozdov, M. N.;
- Drozdov, Yu. N.;
- Murel’, A. V.;
- Khrykin, O. I.;
- Shashkin, V. I.
Publication type:
Article
Possibility of nondestructive layer-by-layer analysis of multilayer structures of ultrathin films using low-energy hydrogen ions.
Published in:
Technical Physics Letters, 1999, v. 25, n. 6, p. 442, doi. 10.1134/1.1262510
By:
- Kurnaev, V. A.;
- Trifonov, N. N.;
- Drozdov, M. N.;
- Salashchenko, N. N.
Publication type:
Article
Influence of screening on calculations on the total energy of calcium oxide.
Published in:
Technical Physics Letters, 1999, v. 25, n. 4, p. 278, doi. 10.1134/1.1262451
By:
- Drozdov, V. A.;
- Pozhivatenko, V. V.;
- Drozdov, M. A.
Publication type:
Article
Influence of desorption on the composition of high-temperature superconducting thin films during magnetron sputtering.
Published in:
Technical Physics Letters, 1998, v. 24, n. 12, p. 952
By:
- Vorob’ev, A. K.;
- Gaponov, S. V.;
- Drozdov, M. N.;
- Klyuenkov, E. B.;
- Luchin, V. I.;
- Masterov, D. V.
Publication type:
Article
Secondary-Ion Mass Spectroscopy for Analysis of the Implanted Hydrogen Profile in Silicon and Impurity Composition of Silicon-on-Insulator Structures.
Published in:
Technical Physics, 2020, v. 65, n. 11, p. 1767, doi. 10.1134/S106378422011002X
By:
- Abrosimova, N. D.;
- Drozdov, M. N.;
- Obolensky, S. V.
Publication type:
Article
Formation of Low-Resistivity Au/Mo/Ti Ohmic Contacts to p-Diamond Epitaxial Layers.
Published in:
Technical Physics, 2019, v. 64, n. 12, p. 1827, doi. 10.1134/S1063784219120041
By:
- Drozdov, M. N.;
- Demidov, E. V.;
- Drozdov, Yu. N.;
- Kraev, S. A.;
- Shashkin, V. I.;
- Arkhipova, E. A.;
- Lobaev, M. A.;
- Vikharev, A. L.;
- Gorbachev, A. M.;
- Radishchev, D. B.;
- Isaev, V. A.;
- Bogdanov, S. A.
Publication type:
Article
Use of related parameters in X-ray diffraction analysis of multilayer structures with allowance for the layer growth time.
Published in:
Technical Physics, 2014, v. 59, n. 3, p. 402, doi. 10.1134/S1063784214030293
By:
- Yunin, P.;
- Drozdov, Yu.;
- Drozdov, M.;
- Novikov, A.;
- Yurasov, D.;
- Zakharov, N.;
- Korolev, S.
Publication type:
Article
Influence of the Substrate Material on the Structural Properties of Cadmium Telluride Films.
Published in:
Journal of Nano- & Electronic Physics, 2024, v. 16, n. 4, p. 1, doi. 10.21272/jnep.16(4).04023
By:
- Meriuts, A. V.;
- Khrypunov, G. S.;
- Kharchenko, M. M.;
- Dobrozhan, A. I.;
- Zaitsev, R. V.;
- Kirichenko, M. V.;
- Minakova, K. O.;
- Drozdov, A. M.
Publication type:
Article
SEARCH AND REMOVAL OF PROHIBITED ITEMS FROM THE HUMAN BODY: MEDICAL– PROCEDURAL ASPECT.
Published in:
Wiadomości Lekarskie, 2021, v. 74, n. 11, Part 2, p. 3048, doi. 10.36740/WLek202111232
By:
- Drozdov, Oleksandr M.;
- Lazukova, Oksana V.;
- Shulgin, Serhiy O.
Publication type:
Article
Ion-plasma treatment of reed switch contacts: A study by time-of-flight secondary ion mass spectrometry.
Published in:
Journal of Analytical Chemistry, 2014, v. 69, n. 13, p. 1245, doi. 10.1134/S1061934814130115
By:
- Tolstoguzov, A.;
- Drozdov, M.;
- Zeltser, I.;
- Arushanov, K.;
- Teodoro, Orlando
Publication type:
Article
Novel microwave plasma-assisted CVD reactor for diamond delta doping.
Published in:
Physica Status Solidi - Rapid Research Letters, 2016, v. 10, n. 4, p. 324, doi. 10.1002/pssr.201510453
By:
- Vikharev, A. L.;
- Gorbachev, A. M.;
- Lobaev, M. A.;
- Muchnikov, A. B.;
- Radishev, D. B.;
- Isaev, V. A.;
- Chernov, V. V.;
- Bogdanov, S. A.;
- Drozdov, M. N.;
- Butler, J. E.
Publication type:
Article
Plasma Chemical Deposition of Hydrogenated DLC Films with Different Hydrogen and sp3-Hybrid Carbon Content.
Published in:
Semiconductors, 2024, v. 58, n. 1, p. 57, doi. 10.1134/S1063782624010123
By:
- Okhapkin, A. I.;
- Drozdov, M. N.;
- Yunin, P. A.;
- Kraev, S. A.;
- Radishev, D. B.
Publication type:
Article
Effect of the Chloropentafluoroethane Additive in Chlorine-Containing Plasma on the Etching Rate and Etching-Profile Characteristics of Gallium Arsenide.
Published in:
Semiconductors, 2021, v. 55, n. 11, p. 865, doi. 10.1134/S1063782621100171
By:
- Okhapkin, A. I.;
- Kraev, S. A.;
- Arkhipova, E. A.;
- Daniltsev, V. M.;
- Khrykin, O. I.;
- Yunin, P. A.;
- Drozdov, M. N.
Publication type:
Article
Doping of Carbon Layers Grown by the Pulsed Laser Technique.
Published in:
Semiconductors, 2021, v. 55, n. 8, p. 660, doi. 10.1134/S1063782621080054
By:
- Danilov, Yu. A.;
- Alaferdov, A. V.;
- Vikhrova, O.V.;
- Zdoroveyshchev, D. A.;
- Kovalskiy, V. A.;
- Kriukov, R. N.;
- Kuznetsov, Yu. M.;
- Lesnikov, V. P.;
- Nezhdanov, A. V.;
- Drozdov, M. N.
Publication type:
Article
Carbon Films Produced by the Pulsed Laser Method and Their Influence on the Properties of GaAs Structures.
Published in:
Semiconductors, 2020, v. 54, n. 9, p. 1059, doi. 10.1134/S1063782620090079
By:
- Danilov, Yu. A.;
- Ved', M. V.;
- Vikhrova, O. V.;
- Dikareva, N. V.;
- Drozdov, M. N.;
- Zvonkov, B. N.;
- Kovalskiy, V. A.;
- Kriukov, R. N.;
- Kudrin, A. V.;
- Lesnikov, V. P.;
- Yunin, P. A.;
- Andreev, A. M.
Publication type:
Article
Formation of Ohmic Contacts to a Diamond-Like Carbon Layer Deposited on a Dielectric Diamond Substrate.
Published in:
Semiconductors, 2020, v. 54, n. 9, p. 1056, doi. 10.1134/S1063782620090213
By:
- Okhapkin, A. I.;
- Yunin, P. A.;
- Arkhipova, E. A.;
- Kraev, S. A.;
- Korolyov, S. A.;
- Drozdov, M. N.;
- Shashkin, V. I.
Publication type:
Article
Modification of the Ratio between sp2- to sp3-Hybridized Carbon Components in PECVD Diamond-Like Films.
Published in:
Semiconductors, 2020, v. 54, n. 9, p. 1047, doi. 10.1134/S1063782620090316
By:
- Yunin, P. A.;
- Okhapkin, A. I.;
- Drozdov, M. N.;
- Korolev, S. A.;
- Arkhipova, E. A.;
- Kraev, S. A.;
- Drozdov, Yu. N.;
- Shashkin, V. I.;
- Radishev, D. B.
Publication type:
Article
Formation of Carbon Layers by the Thermal Decomposition of Carbon Tetrachloride in a Reactor for MOCVD Epitaxy.
Published in:
Semiconductors, 2020, v. 54, n. 8, p. 956, doi. 10.1134/S106378262008028X
By:
- Zvonkov, B. N.;
- Vikhrova, O. V.;
- Danilov, Yu. A.;
- Dorokhin, M. V.;
- Demina, P. B.;
- Drozdov, M. N.;
- Zdoroveyshchev, A. V.;
- Kriukov, R. N.;
- Nezhdanov, A. V.;
- Antonov, I. N.;
- Plankina, S. M.;
- Temiryazeva, M. P.
Publication type:
Article
Ohmic Contacts to CVD Diamond with Boron-Doped Delta Layers.
Published in:
Semiconductors, 2019, v. 53, n. 10, p. 1348, doi. 10.1134/S106378261910004X
By:
- Arkhipova, E. A.;
- Demidov, E. V.;
- Drozdov, M. N.;
- Kraev, S. A.;
- Shashkin, V. I.;
- Lobaev, M. A.;
- Vikharev, A. L.;
- Gorbachev, A. M.;
- Radishchev, D. B.;
- Isaev, V. A.;
- Bogdanov, S. A.
Publication type:
Article
Comparative Analysis of the Luminescence of Ge:Sb Layers Grown on Ge(001) and Si(001) Substrates.
Published in:
Semiconductors, 2019, v. 53, n. 10, p. 1318, doi. 10.1134/S1063782619100154
By:
- Novikov, A. V.;
- Yurasov, D. V.;
- Baidakova, N. A.;
- Bushuykin, P. A.;
- Andreev, B. A.;
- Yunin, P. A.;
- Drozdov, M. N.;
- Yablonskiy, A. N.;
- Kalinnikov, M. A.;
- Krasilnik, Z. F.
Publication type:
Article
Plasma-Chemical Deposition of Diamond-Like Films onto the Surface of Heavily Doped Single-Crystal Diamond.
Published in:
Semiconductors, 2019, v. 53, n. 9, p. 1203, doi. 10.1134/S1063782619090136
By:
- Okhapkin, A. I.;
- Yunin, P. A.;
- Drozdov, M. N.;
- Korolyov, S. A.;
- Kraev, S. A.;
- Arkhipova, E. A.;
- Skorokhodov, E. V.;
- Bushuykin, P. A.;
- Shashkin, V. I.
Publication type:
Article
Influence of Annealing on the Properties of Ge:Sb/Si(001) Layers with an Antimony Concentration Above Its Equilibrium Solubility in Germanium.
Published in:
Semiconductors, 2019, v. 53, n. 7, p. 882, doi. 10.1134/S106378261907025X
By:
- Yurasov, D. V.;
- Baidakova, N. A.;
- Drozdov, M. N.;
- Morozova, E. E.;
- Kalinnikov, M. A.;
- Novikov, A. V.
Publication type:
Article
Plasma Chemical Etching of Gallium Arsenide in C2F5Cl-Based Inductively Coupled Plasma.
Published in:
Semiconductors, 2018, v. 52, n. 11, p. 1473, doi. 10.1134/S1063782618110180
By:
- Okhapkin, A. I.;
- Yunin, P. A.;
- Drozdov, M. N.;
- Kraev, S. A.;
- Skorokhodov, E. V.;
- Shashkin, V. I.
Publication type:
Article
Antimony segregation in Si layers grown by molecular beam epitaxy on Si wafers with different crystallographic orientations.
Published in:
Semiconductors, 2017, v. 51, n. 12, p. 1552, doi. 10.1134/S1063782617120211
By:
- Yurasov, D.;
- Drozdov, M.;
- Shmagin, V.;
- Novikov, A.
Publication type:
Article
Features of the selective manganese doping of GaAs structures.
Published in:
Semiconductors, 2017, v. 51, n. 11, p. 1415, doi. 10.1134/S1063782617110148
By:
- Kalentyeva, I.;
- Vikhrova, O.;
- Danilov, Yu.;
- Zvonkov, B.;
- Kudrin, A.;
- Dorokhin, M.;
- Pavlov, D.;
- Antonov, I.;
- Drozdov, M.;
- Usov, Yu.
Publication type:
Article
Low-temperature deposition of SiN Films in SiH/Ar + N inductively coupled plasma under high silane dilution with argon.
Published in:
Semiconductors, 2017, v. 51, n. 11, p. 1449, doi. 10.1134/S1063782617110215
By:
- Okhapkin, A.;
- Korolyov, S.;
- Yunin, P.;
- Drozdov, M.;
- Kraev, S.;
- Khrykin, O.;
- Shashkin, V.
Publication type:
Article
Erratum to: 'Atomic composition and electrical characteristics of epitaxial CVD diamond layers doped with boron'.
Published in:
2017
By:
- Surovegina, E.;
- Demidov, E.;
- Drozdov, M.;
- Murel, A.;
- Khrykin, O.;
- Shashkin, V.;
- Lobaev, M.;
- Gorbachev, A.;
- Viharev, A.;
- Bogdanov, S.;
- Isaev, V.;
- Muchnikov, A.;
- Chernov, V.;
- Radishchev, D.;
- Batler, J.
Publication type:
Erratum
Atomic composition and electrical characteristics of epitaxial CVD diamond layers doped with boron.
Published in:
Semiconductors, 2016, v. 50, n. 12, p. 1569, doi. 10.1134/S1063782616120204
By:
- Surovegina, E.;
- Demidov, E.;
- Drozdov, M.;
- Murel, A.;
- Khrykin, O.;
- Shashkin, V.;
- Lobaev, M.;
- Gorbachev, A.;
- Viharev, A.;
- Bogdanov, S.;
- Isaev, V.;
- Muchnikov, A.;
- Chernov, V.;
- Radishchev, D.;
- Batler, D.
Publication type:
Article
Heavily doped GaAs:Te layers grown by MOVPE using diisopropyl telluride as a source.
Published in:
Semiconductors, 2016, v. 50, n. 11, p. 1439, doi. 10.1134/S1063782616110075
By:
- Daniltsev, V.;
- Demidov, E.;
- Drozdov, M.;
- Drozdov, Yu.;
- Kraev, S.;
- Surovegina, E.;
- Shashkin, V.;
- Yunin, P.
Publication type:
Article
Effect of thermal annealing on the photoluminescence of structures with InGaAs/GaAs quantum wells and a low-temperature GaAs layer δ-doped with Mn.
Published in:
Semiconductors, 2016, v. 50, n. 11, p. 1469, doi. 10.1134/S1063782616110129
By:
- Kalentyeva, I.;
- Vikhrova, O.;
- Danilov, Yu.;
- Zvonkov, B.;
- Kudrin, A.;
- Drozdov, M.
Publication type:
Article
Epitaxial GaN layers formed on langasite substrates by the plasma-assisted MBE method.
Published in:
Semiconductors, 2016, v. 50, n. 11, p. 1511, doi. 10.1134/S1063782616110166
By:
- Lobanov, D.;
- Novikov, A.;
- Yunin, P.;
- Skorohodov, E.;
- Shaleev, M.;
- Drozdov, M.;
- Khrykin, O.;
- Buzanov, O.;
- Alenkov, V.;
- Folomin, P.;
- Gritsenko, A.
Publication type:
Article
Stimulated emission from a metamorphic GaAsSb bulk layer on a GaAs substrate.
Published in:
Semiconductors, 2016, v. 50, n. 5, p. 586, doi. 10.1134/S106378261605002X
By:
- Aleshkin, V.;
- Dubinov, A.;
- Kudryavtsev, K.;
- Yunin, P.;
- Drozdov, M.;
- Vikhrova, O.;
- Nekorkin, S.;
- Zvonkov, B.
Publication type:
Article
Epitaxially Grown Monoisotopic Si, Ge, and SiGe Alloy Layers: Production and Some Properties.
Published in:
Semiconductors, 2016, v. 50, n. 3, p. 345, doi. 10.1134/S1063782616030064
By:
- Detochenko, A.;
- Denisov, S.;
- Drozdov, M.;
- Mashin, A.;
- Gavva, V.;
- Bulanov, A.;
- Nezhdanov, A.;
- Ezhevskii, A.;
- Stepikhova, M.;
- Chalkov, V.;
- Trushin, V.;
- Shengurov, D.;
- Shengurov, V.;
- Abrosimov, N.;
- Riemann, H.
Publication type:
Article
SiN layers for the in-situ passivation of GaN-based HEMT structures.
Published in:
Semiconductors, 2015, v. 49, n. 11, p. 1421, doi. 10.1134/S1063782615110251
By:
- Yunin, P.;
- Drozdov, Yu.;
- Drozdov, M.;
- Korolev, S.;
- Okhapkin, A.;
- Khrykin, O.;
- Shashkin, V.
Publication type:
Article

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