Found: 12
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Machine learning surrogate for 3D phase-field modeling of ferroelectric tip-induced electrical switching.
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- NPJ Computational Materials, 2024, v. 10, n. 1, p. 1, doi. 10.1038/s41524-024-01375-7
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- Article
Compact Modeling Solutions for Oxide-Based Resistive Switching Memories (OxRAM).
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- Journal of Low Power Electronics & Applications, 2014, v. 4, n. 1, p. 1, doi. 10.3390/jlpea4010001
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- Article
Elucidating Postprogramming Relaxation in Multilevel Cell‐Resistive Random Access Memory by Means of Experimental and Kinetic Monte Carlo Simulation Data.
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- Physica Status Solidi. A: Applications & Materials Science, 2022, v. 219, n. 13, p. 1, doi. 10.1002/pssa.202100753
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- Article
A multi-scale methodology connecting device physics to compact models and circuit applications for OxRAM technology.
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- Physica Status Solidi. A: Applications & Materials Science, 2016, v. 213, n. 2, p. 289, doi. 10.1002/pssa.201532828
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- Article
Phase‐Field Study of Nanocavity‐Assisted Mechanical Switching in PbTiO<sub>3</sub> Thin Films.
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- Advanced Electronic Materials, 2024, v. 10, n. 5, p. 1, doi. 10.1002/aelm.202300744
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- Article
Interplay between Strain and Defects at the Interfaces of Ultra‐Thin Hf<sub>0.5</sub>Zr<sub>0.5</sub>O<sub>2</sub>‐Based Ferroelectric Capacitors.
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- Advanced Electronic Materials, 2023, v. 9, n. 10, p. 1, doi. 10.1002/aelm.202300171
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- Article
Mechanical Switching of Ferroelectric Domains in 33‐200 nm‐Thick Sol‐Gel‐Grown PbZr<sub>0.2</sub>Ti<sub>0.8</sub>O<sub>3</sub> Films Assisted by Nanocavities.
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- Advanced Electronic Materials, 2022, v. 8, n. 9, p. 1, doi. 10.1002/aelm.202200077
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- Article
1S1R Optimization for High‐Frequency Inference on Binarized Spiking Neural Networks.
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- Advanced Electronic Materials, 2022, v. 8, n. 8, p. 1, doi. 10.1002/aelm.202200323
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- Article
Evidence for correlated structural and electrical changes in a Ge<sub>2</sub>Sb<sub>2</sub>Te<sub>5</sub> thin film from combined synchrotron X-ray techniques and sheet resistance measurements during in situ thermal annealing.
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- Journal of Applied Crystallography, 2011, v. 44, n. 4, p. 858, doi. 10.1107/S0021889811024095
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- Article
Ferroelectricity Improvement in Ultra‐Thin Hf<sub>0.5</sub>Zr<sub>0.5</sub>O<sub>2</sub> Capacitors by the Insertion of a Ti Interfacial Layer.
- Published in:
- Physica Status Solidi - Rapid Research Letters, 2022, v. 16, n. 10, p. 1, doi. 10.1002/pssr.202270019
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- Article
Insertion of an Ultrathin Interfacial Aluminum Layer for the Realization of a Hf0.5Zr0.5O2 Ferroelectric Tunnel Junction.
- Published in:
- Physica Status Solidi - Rapid Research Letters, 2022, v. 16, n. 10, p. 1, doi. 10.1002/pssr.202100585
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- Article
Ferroelectricity Improvement in Ultra‐Thin Hf<sub>0.5</sub>Zr<sub>0.5</sub>O<sub>2</sub> Capacitors by the Insertion of a Ti Interfacial Layer.
- Published in:
- Physica Status Solidi - Rapid Research Letters, 2022, v. 16, n. 10, p. 1, doi. 10.1002/pssr.202100583
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- Publication type:
- Article