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Mechanisms of doping and the intensity of emission from intracenter f-f transitions in the doping Eu impurity in structures with In<sub> x</sub>Ga<sub>1 − x</sub> N/GaN quantum wells.
- Published in:
- Semiconductors, 2009, v. 43, n. 4, p. 447, doi. 10.1134/S1063782609040083
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- Article