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Broadband decoupling of intensity and polarization with vectorial Fourier metasurfaces.
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- Nature Communications, 2021, v. 12, n. 1, p. 1, doi. 10.1038/s41467-021-23908-0
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- Article
Les nouvelles diodes électroluminescentes pour l'émission UV.
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- Reflets de la Physique, 2022, n. 71, p. 16, doi. 10.1051/refdp/202271016
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- Article
Metasurface orbital angular momentum holography.
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- Nature Communications, 2019, v. 10, n. 1, p. 1, doi. 10.1038/s41467-019-11030-1
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- Article
Influence of the reactor environment on the selective area thermal etching of GaN nanohole arrays.
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- Scientific Reports, 2020, v. 10, n. 1, p. 1, doi. 10.1038/s41598-020-62539-1
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- Article
Demonstration of critical coupling in an active III-nitride microdisk photonic circuit on silicon.
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- Scientific Reports, 2019, v. 9, n. 1, p. N.PAG, doi. 10.1038/s41598-019-54416-3
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- Article
An Etching‐Free Approach Toward Large‐Scale Light‐Emitting Metasurfaces.
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- Advanced Optical Materials, 2019, v. 7, n. 14, p. N.PAG, doi. 10.1002/adom.201801271
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- Article
Crack Statististics and Stress Analysis of Thick GaN on Patterned Silicon Substrate.
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- Physica Status Solidi (B), 2018, v. 255, n. 5, p. 1, doi. 10.1002/pssb.201700399
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- Article
Mesoporous GaN Made by Selective Area Sublimation for Efficient Light Emission on Si Substrate.
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- Physica Status Solidi (B), 2018, v. 255, n. 5, p. 1, doi. 10.1002/pssb.201700392
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- Article
GaN/Al<sub>0.5</sub>Ga<sub>0.5</sub>N quantum dots and quantum dashes.
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- Physica Status Solidi (B), 2009, v. 246, n. 4, p. 842, doi. 10.1002/pssb.200880614
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- Article
Blue to yellow emission from (Ga,In)/GaN quantum wells grown on pixelated silicon substrate.
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- Scientific Reports, 2020, v. 10, n. 1, p. N.PAG, doi. 10.1038/s41598-020-76031-3
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- Article
Low‐Temperature Electrical Transport Properties of Molecular Beam Epitaxy‐Grown Mg‐Doped GaN Subjected to a High‐Temperature Annealing Process.
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- Physica Status Solidi. A: Applications & Materials Science, 2023, v. 220, n. 16, p. 1, doi. 10.1002/pssa.202200769
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- Article
Light Polarization in Tunnel Junction Injected UV Light‐Emitting Diodes.
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- Physica Status Solidi. A: Applications & Materials Science, 2022, v. 219, n. 7, p. 1, doi. 10.1002/pssa.202200055
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- Article
AlGaN/GaN/AlGaN DH‐HEMTs Grown on a Patterned Silicon Substrate.
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- Physica Status Solidi. A: Applications & Materials Science, 2018, v. 215, n. 9, p. 1, doi. 10.1002/pssa.201700642
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- Article
Influence of metal-organic vapor phase epitaxy parameters and Si(111) substrate type on the properties of AlGaN/GaN HEMTs with thin simple buffer.
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- Physica Status Solidi. A: Applications & Materials Science, 2017, v. 214, n. 4, p. n/a, doi. 10.1002/pssa.201600419
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- Article
Recent improvements of flexible GaN-based HEMT technology.
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- Physica Status Solidi. A: Applications & Materials Science, 2017, v. 214, n. 4, p. n/a, doi. 10.1002/pssa.201600484
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- Article
Growth of nitride-based light emitting diodes with a high-reflectivity distributed Bragg reflector on mesa-patterned silicon substrate.
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- Physica Status Solidi. A: Applications & Materials Science, 2015, v. 212, n. 10, p. 2297, doi. 10.1002/pssa.201532303
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- Article
Enhanced excitonic emission efficiency in porous GaN.
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- Scientific Reports, 2018, v. 8, n. 1, p. 1, doi. 10.1038/s41598-018-34185-1
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- Article
Printing polarization and phase at the optical diffraction limit: near- and far-field optical encryption.
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- Nanophotonics (21928606), 2021, v. 10, n. 1, p. 697, doi. 10.1515/nanoph-2020-0352
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- Article
Revealing topological phase in Pancharatnam–Berry metasurfaces using mesoscopic electrodynamics.
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- Nanophotonics (21928606), 2020, v. 9, n. 16, p. 4711, doi. 10.1515/nanoph-2020-0365
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- Article
Ptychography retrieval of fully polarized holograms from geometric-phase metasurfaces.
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- Nature Communications, 2020, v. 11, n. 1, p. 1, doi. 10.1038/s41467-020-16437-9
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- Article