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Numerical Analysis of the High Pressure MOVPE Upside-Down Reactor for GaN Growth.
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- Electronics (2079-9292), 2021, v. 10, n. 12, p. 1503, doi. 10.3390/electronics10121503
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Monolithic cyan − violet InGaN/GaN LED array.
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- Physica Status Solidi. A: Applications & Materials Science, 2017, v. 214, n. 8, p. n/a, doi. 10.1002/pssa.201600815
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- Article
AlGaInN laser diode technology for GHz high-speed visible light communication through plastic optical fiber and water.
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- Optical Engineering, 2016, v. 55, n. 2, p. 1, doi. 10.1117/1.OE.55.2.026112
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- Article
Influence of Showerhead–Sample Distance (GAP) in MOVPE Close Coupled Showerhead Reactor on GaN Growth.
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- Materials (1996-1944), 2019, v. 12, n. 20, p. 3375, doi. 10.3390/ma12203375
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- Article
Indium Incorporation into InGaN Quantum Wells Grown on GaN Narrow Stripes.
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- Materials (1996-1944), 2019, v. 12, n. 16, p. 2583, doi. 10.3390/ma12162583
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- Article
The impact of point defects in n-type GaN layers on thermal decomposition of InGaN/GaN QWs.
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- Scientific Reports, 2021, v. 11, n. 1, p. 1, doi. 10.1038/s41598-021-81017-w
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- Article
Photoluminescence of InGaN/GaN quantum wells grown on c-plane substrates with locally variable miscut.
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- Physica Status Solidi (B), 2016, v. 253, n. 2, p. 284, doi. 10.1002/pssb.201552244
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- Article
On Morphology of Aluminum–Gallium Nitride Layers Grown by Halide Vapor Phase Epitaxy: The Role of Total Reactants' Pressure and Ammonia Flow Rate.
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- Materials (1996-1944), 2024, v. 17, n. 14, p. 3446, doi. 10.3390/ma17143446
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- Article