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Two-Dimensional-Like Amorphous Indium Tungsten Oxide Nano-Sheet Junctionless Transistors with Low Operation Voltage.
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- Scientific Reports, 2019, v. 9, n. 1, p. N.PAG, doi. 10.1038/s41598-019-44131-4
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The Influence of Annealing Temperature on Amorphous Indium‐Zinc‐Tungsten Oxide Thin‐Film Transistors.
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- Physica Status Solidi. A: Applications & Materials Science, 2018, v. 215, n. 6, p. 1, doi. 10.1002/pssa.201700785
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- Article
Factors Affecting Industrial Relations in the Electronics Industry of Hong Kong...
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- Managerial & Decision Economics, 1984, v. 5, n. 2, p. 104, doi. 10.1002/mde.4090050209
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Numerical Analysis of Oxygen-Related Defects in Amorphous In-W-O Nanosheet Thin-Film Transistor.
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- Nanomaterials (2079-4991), 2021, v. 11, n. 11, p. 3070, doi. 10.3390/nano11113070
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- Article