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Ferroelectric Field Effect Transistors–Based Content‐Addressable Storage‐Class Memory: A Study on the Impact of Device Variation and High‐Temperature Compatibility.
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- Advanced Intelligent Systems (2640-4567), 2024, v. 6, n. 4, p. 1, doi. 10.1002/aisy.202300461
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Compute in‐Memory with Non‐Volatile Elements for Neural Networks: A Review from a Co‐Design Perspective.
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- Advanced Materials, 2023, v. 35, n. 37, p. 1, doi. 10.1002/adma.202204944
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- Article