Found: 6
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Empirical Study of Hall Bars on Few-Layer Graphene on C-Face 4H-SiC.
- Published in:
- Journal of Electronic Materials, 2010, v. 39, n. 12, p. 2696, doi. 10.1007/s11664-010-1375-1
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- Article
Defect Analysis of Barrier Height Inhomogeneity in Titanium 4H-SiC Schottky Barrier Diodes.
- Published in:
- Journal of Electronic Materials, 2009, v. 38, n. 4, p. 574, doi. 10.1007/s11664-008-0647-5
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- Article
Effects of Illumination on Ar<sup>+</sup>-Implanted n-Type 6H-SiC Epitaxial Layers.
- Published in:
- Journal of Electronic Materials, 2007, v. 36, n. 4, p. 340, doi. 10.1007/s11664-006-0080-6
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- Article
CAN THE <sup>14</sup>C PRODUCTION IN 1055 CE BE AFFECTED BY SN1054?
- Published in:
- Radiocarbon, 2020, v. 62, n. 5, p. 1403, doi. 10.1017/RDC.2020.58
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- Article
Findings from an in-Depth Annual Tree-Ring Radiocarbon Intercomparison.
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- Radiocarbon, 2020, v. 62, n. 4, p. 873, doi. 10.1017/RDC.2020.49
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- Article
BIOMASS GROWTH RATE OF TREES FROM CAMEROON BASED ON 14C ANALYSIS AND GROWTH MODELS.
- Published in:
- Radiocarbon, 2013, v. 55, n. 2, p. 885, doi. 10.1017/S0033822200058045
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- Article