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Industrial GaN FET technology.
- Published in:
- International Journal of Microwave & Wireless Technologies, 2010, v. 2, n. 1, p. 21, doi. 10.1017/S1759078710000073
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- Publication type:
- Article
Investigation of Leakage Current of AlGaN/GaN HEMTs Under Pinch-Off Condition by Electroluminescence Microscopy.
- Published in:
- Journal of Electronic Materials, 2010, v. 39, n. 6, p. 756, doi. 10.1007/s11664-010-1120-9
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- Publication type:
- Article