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In vitro Reconstitution of the S. aureus 30S Ribosomal Subunit and RbfA Factor Complex for Structural Studies.
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- Biochemistry (00062979), 2020, v. 85, n. 5, p. 545, doi. 10.1134/S000629792005003X
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- Article
Effect of inhomogeneous broadening of submonolayer quantum dots on the generation of vertical-cavity laser with saturable absorber.
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- Optics & Spectroscopy, 2011, v. 111, n. 1, p. 142, doi. 10.1134/S0030400X1107006X
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- Article
Bistable lasing of the vertical cavity surface emitting laser with a saturable absorber.
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- Optics & Spectroscopy, 2010, v. 109, n. 2, p. 290, doi. 10.1134/S0030400X10080230
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- Article
Simulation and Analysis of the Optical Characteristics of Cylindrical Micropillars with InAs/GaAs Quantum Dots.
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- JETP Letters, 2022, v. 116, n. 9, p. 613, doi. 10.1134/S0021364022800207
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- Article
Extent of N-Terminus Folding of Semenogelin 1 Cleavage Product Determines Tendency to Amyloid Formation.
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- International Journal of Molecular Sciences, 2023, v. 24, n. 10, p. 8949, doi. 10.3390/ijms24108949
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- Article
Chemokine Expression in Neutrophils and Subcutaneous Adipose Tissue Cells Obtained during Abdominoplasty from Patients with Obesity and Normal Body Weight.
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- Bulletin of Experimental Biology & Medicine, 2019, v. 167, n. 6, p. 728, doi. 10.1007/s10517-019-04609-7
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- Article
Chemokine Expression in Neutrophils and Subcutaneous Adipose Tissue Cells Obtained during Abdominoplasty from Patients with Obesity and Normal Body Weight.
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- Bulletin of Experimental Biology & Medicine, 2019, v. 166, n. 6, p. 728, doi. 10.1007/s10517-019-04609-7
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APPLICABILITY OF COMPUTER SIMULATION WHILE DESIGNING MECHANICAL SYSTEMS OF MINING ROLLING STOCK.
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- Scientific Bulletin of National Mining University, 2013, n. 6, p. 55
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- Article
Investigation of the Characteristics of the InGaAs/InAlGaAs Superlattice for 1300 nm Range Vertical-Cavity Surface-Emitting Lasers.
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- Technical Physics, 2023, v. 68, n. 12, p. 549, doi. 10.1134/S1063784223080078
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- Article
Distribution and abundance of western gray whales off northeastern Sakhalin Island, Russia, 2001–2003.
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- Environmental Monitoring & Assessment, 2007, v. 134, n. 1-3, p. 107, doi. 10.1007/s10661-007-9811-2
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- Article
Distribution and abundance of western gray whales during a seismic survey near Sakhalin Island, Russia.
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- Environmental Monitoring & Assessment, 2007, v. 134, n. 1-3, p. 45, doi. 10.1007/s10661-007-9809-9
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- Article
A western gray whale mitigation and monitoring program for a 3-D seismic survey, Sakhalin Island, Russia.
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- Environmental Monitoring & Assessment, 2007, v. 134, n. 1-3, p. 1, doi. 10.1007/s10661-007-9813-0
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- Article
Feeding of western gray whales during a seismic survey near Sakhalin Island, Russia.
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- Environmental Monitoring & Assessment, 2007, v. 134, n. 1-3, p. 93, doi. 10.1007/s10661-007-9810-3
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- Article
Investigation of a p–i–n Photodetector with an Absorbing Medium Based on InGaAs/GaAs Quantum Well-Dots.
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- Semiconductors, 2023, v. 57, n. 13, p. 594, doi. 10.1134/S1063782623050093
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- Article
1550 nm Range High-Speed Single-Mode Vertical-Cavity Surface-Emitting Lasers.
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- Semiconductors, 2023, v. 57, n. 4, p. 221, doi. 10.1134/S1063782623070072
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- Article
Investigation of Photoluminescence in the InGaAs/GaAs System with 1100-nm Range Quantum Dots.
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- Semiconductors, 2023, v. 57, n. 2, p. 93, doi. 10.1134/S1063782623040012
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- Article
1.55-μm-Range Vertical-Cavity Surface-Emitting Lasers, Manufactured by Wafer Fusion of Heterostructures Grown by Solid-Source Molecular-Beam Epitaxy.
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- Semiconductors, 2020, v. 54, n. 10, p. 1276, doi. 10.1134/S1063782620100048
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- Article
A Study of the Photoresponse in Graphene Produced by Chemical Vapor Deposition.
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- Semiconductors, 2020, v. 54, n. 9, p. 991, doi. 10.1134/S1063782620090031
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- Article
Influence of Output Optical Losses on the Dynamic Characteristics of 1.55-μm Wafer-Fused Vertical-Cavity Surface-Emitting Lasers.
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- Semiconductors, 2019, v. 53, n. 8, p. 1104, doi. 10.1134/S1063782619080074
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- Article
Evaluation of the Impact of Surface Recombination in Microdisk Lasers by Means of High-Frequency Modulation.
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- Semiconductors, 2019, v. 53, n. 8, p. 1099, doi. 10.1134/S1063782619080220
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- Article
Emission-Line Width and α-Factor of 850-nm Single-Mode Vertical-Cavity Surface-Emitting Lasers Based on InGaAs/AlGaAs Quantum Wells.
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- Semiconductors, 2018, v. 52, n. 1, p. 93, doi. 10.1134/S1063782618010062
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Molecular-beam epitaxy of InGaAs/InAlAs/AlAs structures for heterobarrier varactors.
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- Semiconductors, 2017, v. 51, n. 11, p. 1431, doi. 10.1134/S1063782617110185
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Optical properties of metamorphic hybrid heterostuctures for vertical-cavity surface-emitting lasers operating in the 1300-nm spectral range.
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- Semiconductors, 2017, v. 51, n. 9, p. 1127, doi. 10.1134/S1063782617090056
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- Article
Polarization characteristics of 850-nm vertical-cavity surface-emitting lasers with intracavity contacts and a rhomboidal oxide current aperture.
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- Semiconductors, 2016, v. 50, n. 10, p. 1390, doi. 10.1134/S1063782616100092
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Optical properties of InGaAs/InGaAlAs quantum wells for the 1520-1580 nm spectral range.
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- Semiconductors, 2016, v. 50, n. 9, p. 1186, doi. 10.1134/S1063782616090098
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- Article
Microdisk Injection Lasers for the 1.27-μm Spectral Range.
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- Semiconductors, 2016, v. 50, n. 3, p. 390, doi. 10.1134/S1063782616030131
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Study of high-speed semiconductor VCSELs based on AlInGaAs heterostructures with large gain-cavity detuning.
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- Semiconductors, 2015, v. 49, n. 1, p. 88, doi. 10.1134/S1063782615010170
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Effect of the photon lifetime on the characteristics of 850-nm vertical-cavity surface-emitting lasers with fully doped distributed Bragg reflectors and an oxide current aperture.
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- Semiconductors, 2014, v. 48, n. 12, p. 1657, doi. 10.1134/S1063782614120033
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Degradation-robust 850-nm vertical-cavity surface-emitting lasers for 25Gb/s optical data transmission.
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- Semiconductors, 2014, v. 48, n. 1, p. 77, doi. 10.1134/S1063782614010072
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Efficient electro-optic semiconductor medium based on type-II heterostructures.
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- Semiconductors, 2013, v. 47, n. 11, p. 1528, doi. 10.1134/S1063782613110201
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Single-spatial-mode semiconductor VCSELs with a nonplanar upper dielectric DBR.
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- Semiconductors, 2013, v. 47, n. 7, p. 993, doi. 10.1134/S1063782613070166
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Influence of optical losses on the dynamic characteristics of linear arrays of near-infrared vertical-cavity surface-emitting lasers.
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- Semiconductors, 2013, v. 47, n. 6, p. 844, doi. 10.1134/S1063782613060055
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High-frequency electrical properties of a vertical-cavity surface-emitting laser with a monolithically integrated electro-optical modulator.
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- Semiconductors, 2013, v. 47, n. 5, p. 695, doi. 10.1134/S1063782613050175
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Optical anisotropy of InGaAs quantum dots.
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- Semiconductors, 2013, v. 47, n. 1, p. 85, doi. 10.1134/S1063782613010077
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- Article
Effect of AlGaAs-(AlGa)O pedestal parameters on characteristics of a microdisk laser with active region based on InAs/InGaAs quantum dots.
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- Semiconductors, 2011, v. 45, n. 7, p. 962, doi. 10.1134/S1063782611070116
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- Article
Matrices of 960-nm vertical-cavity surface-emitting lasers.
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- Semiconductors, 2011, v. 45, n. 6, p. 818, doi. 10.1134/S1063782611060133
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- Article
Dynamic properties of AlGaAs vertical cavity surface emitting lasers with active region based on submonolayer InAs insertions.
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- Semiconductors, 2011, v. 45, n. 5, p. 679, doi. 10.1134/S1063782611050216
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- Article
Analysis of mechanisms of carrier emission in the p-i-n structures with In(Ga)As quantum dots.
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- Semiconductors, 2010, v. 44, n. 10, p. 1308, doi. 10.1134/S106378261010012X
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- Article
Effect of features of inner atomic shells excitation by accelerated ions on the shape of the emitted X-ray lines.
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- XRS: X-ray Spectrometry, 1994, v. 23, n. 2, p. 79, doi. 10.1002/xrs.1300230208
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- Article
AlGaAs/GaAs photovoltaic cells with an array of InGaAs QDs.
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- Semiconductors, 2009, v. 43, n. 4, p. 514, doi. 10.1134/S1063782609040204
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- Article
Effect of excitation level on the optical properties of GaAs/AlGaO microdisks with an active region containing InAs quantum dots.
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- Semiconductors, 2008, v. 42, n. 10, p. 1228, doi. 10.1134/S1063782608100151
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- Article
The use of spatially ordered arrays of etched holes for fabrication of single-mode vertical-cavity surface-emitting lasers based on submonolayer InGaAs quantum dots.
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- Semiconductors, 2007, v. 41, n. 10, p. 1224, doi. 10.1134/S1063782607100181
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- Article
Experimental study of temperature dependence of threshold characteristics in semiconductor VCSELs based on submonolayer InGaAs QDs.
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- Semiconductors, 2006, v. 40, n. 10, p. 1232, doi. 10.1134/S1063782606100198
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- Article
Room-temperature 1.3-μm lasing in a microdisk with quantum dots.
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- Semiconductors, 2006, v. 40, n. 9, p. 1101, doi. 10.1134/S106378260609020X
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- Article
VCSELs based on arrays of sub-monolayer InGaAs quantum dots.
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- Semiconductors, 2006, v. 40, n. 5, p. 615, doi. 10.1134/S1063782606050186
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- Article
Optical studies of asymmetric-waveguide submonolayer InGaAs QD microdisks formed by selective oxidation.
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- Semiconductors, 2006, v. 40, n. 4, p. 476, doi. 10.1134/S1063782606040191
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- Article
Nonequilibrium Room-Temperature Carrier Distribution in InAs Quantum Dots Overgrown with Thin AlAs/InAlAs Layers.
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- Semiconductors, 2005, v. 39, n. 10, p. 1188, doi. 10.1134/1.2085268
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- Article
Stresses in Selectively Oxidized GaAs/(AlGa)<sub>x</sub>O<sub>y</sub> Structures.
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- Semiconductors, 2005, v. 39, n. 7, p. 748, doi. 10.1134/1.1992627
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- Article
Design and Fabrication Technology for Arrays for Vertical-Cavity Surface-Emitting Lasers.
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- Semiconductors, 2005, v. 39, n. 4, p. 462, doi. 10.1134/1.1900263
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- Article
HIGH TEMPERATURE STABILITY OF OPTICAL PROPERTIES OF InAs QUANTUM DOTS REALIZED BY CONTROLLING OF QUANTUM DOTS ELECTRONIC SPECTRUM.
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- International Journal of Nanoscience, 2007, v. 6, n. 3/4, p. 283, doi. 10.1142/S0219581X07004742
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- Article