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AP-MOVPE Technology and Characterization of InGaAsN p-i-n Subcell for InGaAsN/GaAs Tandem Solar Cell.
- Published in:
- International Journal of Electronics & Telecommunications, 2014, v. 60, n. 2, p. 151, doi. 10.2478/eletel-2014-0018
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- Article
Photoluminescence and Raman spectroscopies as an optical approach of stress determining in MOVPE grown quantum cascade laser structures.
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- Optica Applicata, 2020, v. 50, n. 2, p. 289, doi. 10.37190/oa200212
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- Article
The influence of quantum well and barrier thicknesses on photoluminescence spectra of InGaAs/AlInAs superlattices grown by LP-MOVPE.
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- Optica Applicata, 2020, v. 50, n. 2, p. 251, doi. 10.37190/oa200208
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- Article
Technology and properties of low-pressure metalorganic vapour phase epitaxy grown InGaAs/AlInAs superlattice for quantum cascade laser applications.
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- Optica Applicata, 2016, v. 46, n. 2, p. 241, doi. 10.5277/oa160208
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- Article
Role of nitrogen in carrier confinement potential engineering and optical properties of GaAs-based quantum wells heterostructures.
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- Optica Applicata, 2016, v. 46, n. 2, p. 255, doi. 10.5277/oa160210
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- Article
Analysis of Current Transport Mechanism in AP-MOVPE Grown GaAsN p-i-n Solar Cell.
- Published in:
- Energies (19961073), 2021, v. 14, n. 15, p. 4651, doi. 10.3390/en14154651
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- Article