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High Responsivity Phototransistors Based on Few-Layer ReS2 for Weak Signal Detection.
Published in:
Advanced Functional Materials, 2016, v. 26, n. 12, p. 1938, doi. 10.1002/adfm.201504408
By:
- Liu, Erfu;
- Long, Mingsheng;
- Zeng, Junwen;
- Luo, Wei;
- Wang, Yaojia;
- Pan, Yiming;
- Zhou, Wei;
- Wang, Baigeng;
- Hu, Weida;
- Ni, Zhenhua;
- You, Yumeng;
- Zhang, Xueao;
- Qin, Shiqiao;
- Shi, Yi;
- Watanabe, Kenji;
- Taniguchi, Takashi;
- Yuan, Hongtao;
- Hwang, Harold Y.;
- Cui, Yi;
- Miao, Feng
Publication type:
Article
Shubnikov de Haas quantum oscillation of the surface states in the metallic Bismuth Telluride sheets.
Published in:
European Physical Journal D (EPJ D), 2013, v. 67, n. 4, p. 1, doi. 10.1140/epjd/e2013-30536-5
By:
- Chen, Taishi;
- Han, Junhao;
- Li, Zhaoguo;
- Song, Fengqi;
- Zhao, Bo;
- Wang, Xuefeng;
- Wang, Baigeng;
- Wan, Jianguo;
- Han, Min;
- Zhang, Rong;
- Wang, Guanghou
Publication type:
Article
Weak antilocalization in Cd3As2 thin films.
Published in:
Scientific Reports, 2016, p. 22377, doi. 10.1038/srep22377
By:
- Zhao, Bo;
- Cheng, Peihong;
- Pan, Haiyang;
- Zhang, Shuai;
- Wang, Baigeng;
- Wang, Guanghou;
- Xiu, Faxian;
- Song, Fengqi
Publication type:
Article
A label-free and portable graphene FET aptasensor for children blood lead detection.
Published in:
Scientific Reports, 2016, p. 21711, doi. 10.1038/srep21711
By:
- Wang, Chenyu;
- Cui, Xinyi;
- Li, Ying;
- Li, Hongbo;
- Huang, Lei;
- Bi, Jun;
- Luo, Jun;
- Ma, Lena Q.;
- Zhou, Wei;
- Cao, Yi;
- Wang, Baigeng;
- Miao, Feng
Publication type:
Article
Universal anyons at the irradiated surface of topological insulator.
Published in:
Scientific Reports, 2016, p. 20075, doi. 10.1038/srep20075
By:
- Wang, Rui;
- Chen, Wei;
- Wang, Baigeng;
- Xing, D. Y.
Publication type:
Article
A selector device based on graphene-oxide heterostructures for memristor crossbar applications.
Published in:
Applied Physics A: Materials Science & Processing, 2015, v. 120, n. 2, p. 403, doi. 10.1007/s00339-015-9208-y
By:
- Wang, Miao;
- Lian, Xiaojuan;
- Pan, Yiming;
- Zeng, Junwen;
- Wang, Chengyu;
- Liu, Erfu;
- Wang, Baigeng;
- Yang, J.;
- Miao, Feng;
- Xing, Dingyu
Publication type:
Article
Millimetre-long transport of photogenerated carriers in topological insulators.
Published in:
Nature Communications, 2019, v. 10, n. 1, p. 1, doi. 10.1038/s41467-019-13711-3
By:
- Hou, Yasen;
- Wang, Rui;
- Xiao, Rui;
- McClintock, Luke;
- Clark Travaglini, Henry;
- Paulus Francia, John;
- Fetsch, Harry;
- Erten, Onur;
- Savrasov, Sergey Y.;
- Wang, Baigeng;
- Rossi, Antonio;
- Vishik, Inna;
- Rotenberg, Eli;
- Yu, Dong
Publication type:
Article
Prediction of a topological p + ip excitonic insulator with parity anomaly.
Published in:
Nature Communications, 2019, v. 10, n. 1, p. 1, doi. 10.1038/s41467-018-08203-9
By:
- Wang, Rui;
- Erten, Onur;
- Wang, Baigeng;
- Xing, D. Y.
Publication type:
Article
Gate-tunable negative longitudinal magnetoresistance in the predicted type-II Weyl semimetal WTe2.
Published in:
Nature Communications, 2016, v. 7, n. 10, p. 13142, doi. 10.1038/ncomms13142
By:
- Wang, Yaojia;
- Liu, Erfu;
- Liu, Huimei;
- Pan, Yiming;
- Zhang, Longqiang;
- Zeng, Junwen;
- Fu, Yajun;
- Wang, Miao;
- Xu, Kang;
- Huang, Zhong;
- Wang, Zhenlin;
- Lu, Hai-Zhou;
- Xing, Dingyu;
- Wang, Baigeng;
- Wan, Xiangang;
- Miao, Feng
Publication type:
Article
The positive piezoconductive effect in graphene.
Published in:
Nature Communications, 2015, v. 6, n. 9, p. 8119, doi. 10.1038/ncomms9119
By:
- Xu, Kang;
- Wang, Ke;
- Zhao, Wei;
- Bao, Wenzhong;
- Liu, Erfu;
- Ren, Yafei;
- Wang, Miao;
- Fu, Yajun;
- Zeng, Junwen;
- Li, Zhaoguo;
- Zhou, Wei;
- Song, Fengqi;
- Wang, Xinran;
- Shi, Yi;
- Wan, Xiangang;
- Fuhrer, Michael S.;
- Wang, Baigeng;
- Qiao, Zhenhua;
- Miao, Feng;
- Xing, Dingyu
Publication type:
Article
Pressure-driven dome-shaped superconductivity and electronic structural evolution in tungsten ditelluride.
Published in:
Nature Communications, 2015, v. 6, n. 7, p. 7805, doi. 10.1038/ncomms8805
By:
- Pan, Xing-Chen;
- Chen, Xuliang;
- Liu, Huimei;
- Feng, Yanqing;
- Wei, Zhongxia;
- Zhou, Yonghui;
- Chi, Zhenhua;
- Pi, Li;
- Yen, Fei;
- Song, Fengqi;
- Wan, Xiangang;
- Yang, Zhaorong;
- Wang, Baigeng;
- Wang, Guanghou;
- Zhang, Yuheng
Publication type:
Article
Integrated digital inverters based on two-dimensional anisotropic ReS2 field-effect transistors.
Published in:
Nature Communications, 2015, v. 6, n. 5, p. 6991, doi. 10.1038/ncomms7991
By:
- Liu, Erfu;
- Fu, Yajun;
- Wang, Yaojia;
- Feng, Yanqing;
- Liu, Huimei;
- Wan, Xiangang;
- Zhou, Wei;
- Wang, Baigeng;
- Shao, Lubin;
- Ho, Ching-Hwa;
- Huang, Ying-Sheng;
- Cao, Zhengyi;
- Wang, Laiguo;
- Li, Aidong;
- Zeng, Junwen;
- Song, Fengqi;
- Wang, Xinran;
- Shi, Yi;
- Yuan, Hongtao;
- Hwang, Harold Y.
Publication type:
Article
Towards intrinsic charge transport in monolayer molybdenum disulfide by defect and interface engineering.
Published in:
Nature Communications, 2014, v. 5, n. 10, p. 1, doi. 10.1038/ncomms6290
By:
- Zhihao Yu;
- Yiming Pan;
- Yuting Shen;
- Zilu Wang;
- Zhun-Yong Ong;
- Tao Xu;
- Run Xin;
- Lijia Pan;
- Baigeng Wang;
- Litao Sun;
- Jinlan Wang;
- Gang Zhang;
- Yong Wei Zhang;
- Yi Shi;
- Xinran Wang
Publication type:
Article
Topological transport and atomic tunnelling-clustering dynamics for aged Cu-doped Bi2Te3 crystals.
Published in:
Nature Communications, 2014, v. 5, n. 9, p. 5022, doi. 10.1038/ncomms6022
By:
- Chen, Taishi;
- Chen, Qian;
- Schouteden, Koen;
- Huang, Wenkai;
- Wang, Xuefeng;
- Li, Zhe;
- Miao, Feng;
- Wang, Xinran;
- Li, Zhaoguo;
- Zhao, Bo;
- Li, Shaochun;
- Song, Fengqi;
- Wang, Jinlan;
- Wang, Baigeng;
- Van Haesendonck, Chris;
- Wang, Guanghou
Publication type:
Article
Andreev reflection in a triple quantum dot system coupled with a normal-metal and a superconductor.
Published in:
Physica Status Solidi (B), 2010, v. 247, n. 2, p. 335, doi. 10.1002/pssb.200945381
By:
- Bai, Long;
- Wu, Yang-Jin;
- Wang, Baigeng
Publication type:
Article
Saturated Nonsingular Fast Sliding Mode Control for the Crane-Form Pipeline System.
Published in:
Entropy, 2022, v. 24, n. 12, p. 1800, doi. 10.3390/e24121800
By:
- Wang, Baigeng;
- Li, Shurong
Publication type:
Article
Band Structure Perfection and Superconductivity in Type‐II Dirac Semimetal Ir1−xPtxTe2.
Published in:
Advanced Materials, 2018, v. 30, n. 35, p. 1, doi. 10.1002/adma.201801556
By:
- Fei, Fucong;
- Bo, Xiangyan;
- Wang, Pengdong;
- Ying, Jianghua;
- Li, Jian;
- Chen, Ke;
- Dai, Qing;
- Chen, Bo;
- Sun, Zhe;
- Zhang, Minhao;
- Qu, Fanming;
- Zhang, Yi;
- Wang, Qianghua;
- Wang, Xuefeng;
- Cao, Lu;
- Bu, Haijun;
- Song, Fengqi;
- Wan, Xiangang;
- Wang, Baigeng
Publication type:
Article
Realization of Room-Temperature Phonon-Limited Carrier Transport in Monolayer MoS2 by Dielectric and Carrier Screening.
Published in:
Advanced Materials, 2016, v. 28, n. 3, p. 547, doi. 10.1002/adma.201503033
By:
- Yu, Zhihao;
- Ong, Zhun-Yong;
- Pan, Yiming;
- Cui, Yang;
- Xin, Run;
- Shi, Yi;
- Wang, Baigeng;
- Wu, Yun;
- Chen, Tangsheng;
- Zhang, Yong-Wei;
- Zhang, Gang;
- Wang, Xinran
Publication type:
Article
Transistors: Realization of Room-Temperature Phonon-Limited Carrier Transport in Monolayer MoS2 by Dielectric and Carrier Screening (Adv. Mater. 3/2016).
Published in:
Advanced Materials, 2016, v. 28, n. 3, p. 546, doi. 10.1002/adma.201670019
By:
- Yu, Zhihao;
- Ong, Zhun-Yong;
- Pan, Yiming;
- Cui, Yang;
- Xin, Run;
- Shi, Yi;
- Wang, Baigeng;
- Wu, Yun;
- Chen, Tangsheng;
- Zhang, Yong-Wei;
- Zhang, Gang;
- Wang, Xinran
Publication type:
Article
High-Performance Monolayer WS2 Field-Effect Transistors on High-κ Dielectrics.
Published in:
Advanced Materials, 2015, v. 27, n. 35, p. 5230, doi. 10.1002/adma.201502222
By:
- Cui, Yang;
- Xin, Run;
- Yu, Zhihao;
- Pan, Yiming;
- Ong, Zhun-Yong;
- Wei, Xiaoxu;
- Wang, Junzhuan;
- Nan, Haiyan;
- Ni, Zhenhua;
- Wu, Yun;
- Chen, Tangsheng;
- Shi, Yi;
- Wang, Baigeng;
- Zhang, Gang;
- Zhang, Yong-Wei;
- Wang, Xinran
Publication type:
Article
High-Mobility Sm-Doped Bi2Se3 Ferromagnetic Topological Insulators and Robust Exchange Coupling.
Published in:
Advanced Materials, 2015, v. 27, n. 33, p. 4823, doi. 10.1002/adma.201501254
By:
- Chen, Taishi;
- Liu, Wenqing;
- Zheng, Fubao;
- Gao, Ming;
- Pan, Xingchen;
- van der Laan, Gerrit;
- Wang, Xuefeng;
- Zhang, Qinfang;
- Song, Fengqi;
- Wang, Baigeng;
- Wang, Baolin;
- Xu, Yongbing;
- Wang, Guanghou;
- Zhang, Rong
Publication type:
Article
Tunable, Ultralow-Power Switching in Memristive Devices Enabled by a Heterogeneous Graphene-Oxide Interface.
Published in:
Advanced Materials, 2014, v. 26, n. 20, p. 3275, doi. 10.1002/adma.201306028
By:
- Qian, Min;
- Pan, Yiming;
- Liu, Fengyuan;
- Wang, Miao;
- Shen, Haoliang;
- He, Daowei;
- Wang, Baigeng;
- Shi, Yi;
- Miao, Feng;
- Wang, Xinran
Publication type:
Article
Effective impurity behavior emergent from non-Hermitian proximity effect.
Published in:
Communications Physics, 2023, v. 6, n. 1, p. 1, doi. 10.1038/s42005-023-01282-1
By:
- Wu, Deguang;
- Chen, Jiasong;
- Su, Wei;
- Wang, Rui;
- Wang, Baigeng;
- Xing, D. Y.
Publication type:
Article
Anomalous quantization trajectory and parity anomaly in Co cluster decorated BiSbTeSe2 nanodevices.
Published in:
Nature Communications, 2017, v. 8, n. 1, p. 1, doi. 10.1038/s41467-017-01065-7
By:
- Shuai Zhang;
- Rui Wang;
- Geliang Yu;
- Xing-Chen Pan;
- Zhongxia Wei;
- Zhanbin Bai;
- Fucong Fei;
- Mingyu Wang;
- Fengqi Song;
- Baigeng Wang;
- Dingyu Xing;
- Guanghou Wang;
- Li Pi;
- Jinglei Zhang;
- Chuanying Xi;
- Yuheng Zhang;
- Jian Liao;
- Yongqing Li;
- Xuefeng Wang
Publication type:
Article
The Material Efforts for Quantized Hall Devices Based on Topological Insulators.
Published in:
Advanced Materials, 2020, v. 32, n. 27, p. 1, doi. 10.1002/adma.201904593
By:
- Fei, Fucong;
- Zhang, Shuai;
- Zhang, Minhao;
- Shah, Syed Adil;
- Song, Fengqi;
- Wang, Xuefeng;
- Wang, Baigeng
Publication type:
Article
Evidence of Both Surface and Bulk Dirac Bands and Anisotropic Nonsaturating Magnetoresistance in ZrSiS.
Published in:
Advanced Electronic Materials, 2016, v. 2, n. 10, p. 1, doi. 10.1002/aelm.201600228
By:
- Wang, Xuefeng;
- Pan, Xingchen;
- Gao, Ming;
- Yu, Jihai;
- Jiang, Juan;
- Zhang, Junran;
- Zuo, Huakun;
- Zhang, Minhao;
- Wei, Zhongxia;
- Niu, Wei;
- Xia, Zhengcai;
- Wan, Xiangang;
- Chen, Yulin;
- Song, Fengqi;
- Xu, Yongbing;
- Wang, Baigeng;
- Wang, Guanghou;
- Zhang, Rong
Publication type:
Article
Quantum Electronics: Evidence of Both Surface and Bulk Dirac Bands and Anisotropic Nonsaturating Magnetoresistance in ZrSiS (Adv. Electron. Mater. 10/2016).
Published in:
Advanced Electronic Materials, 2016, v. 2, n. 10, p. 1, doi. 10.1002/aelm.201670055
By:
- Wang, Xuefeng;
- Pan, Xingchen;
- Gao, Ming;
- Yu, Jihai;
- Jiang, Juan;
- Zhang, Junran;
- Zuo, Huakun;
- Zhang, Minhao;
- Wei, Zhongxia;
- Niu, Wei;
- Xia, Zhengcai;
- Wan, Xiangang;
- Chen, Yulin;
- Song, Fengqi;
- Xu, Yongbing;
- Wang, Baigeng;
- Wang, Guanghou;
- Zhang, Rong
Publication type:
Article

Found: 27

High Responsivity Phototransistors Based on Few-Layer ReS<sub>2</sub> for Weak Signal Detection.

Shubnikov de Haas quantum oscillation of the surface states in the metallic Bismuth Telluride sheets.

Weak antilocalization in Cd<sub>3</sub>As<sub>2</sub> thin films.

A label-free and portable graphene FET aptasensor for children blood lead detection.

Universal anyons at the irradiated surface of topological insulator.

A selector device based on graphene-oxide heterostructures for memristor crossbar applications.

Millimetre-long transport of photogenerated carriers in topological insulators.

Prediction of a topological p + ip excitonic insulator with parity anomaly.

Gate-tunable negative longitudinal magnetoresistance in the predicted type-II Weyl semimetal WTe<sub>2</sub>.

The positive piezoconductive effect in graphene.

Pressure-driven dome-shaped superconductivity and electronic structural evolution in tungsten ditelluride.

Integrated digital inverters based on two-dimensional anisotropic ReS<sub>2</sub> field-effect transistors.

Towards intrinsic charge transport in monolayer molybdenum disulfide by defect and interface engineering.

Topological transport and atomic tunnelling-clustering dynamics for aged Cu-doped Bi<sub>2</sub>Te<sub>3</sub> crystals.

Andreev reflection in a triple quantum dot system coupled with a normal-metal and a superconductor.

Saturated Nonsingular Fast Sliding Mode Control for the Crane-Form Pipeline System.

Band Structure Perfection and Superconductivity in Type‐II Dirac Semimetal Ir<sub>1−</sub><sub>x</sub>Pt<sub>x</sub>Te<sub>2</sub>.

Realization of Room-Temperature Phonon-Limited Carrier Transport in Monolayer MoS<sub>2</sub> by Dielectric and Carrier Screening.

Transistors: Realization of Room-Temperature Phonon-Limited Carrier Transport in Monolayer MoS<sub>2</sub> by Dielectric and Carrier Screening (Adv. Mater. 3/2016).

High-Performance Monolayer WS<sub>2</sub> Field-Effect Transistors on High-κ Dielectrics.

High-Mobility Sm-Doped Bi<sub>2</sub>Se<sub>3</sub> Ferromagnetic Topological Insulators and Robust Exchange Coupling.

Tunable, Ultralow-Power Switching in Memristive Devices Enabled by a Heterogeneous Graphene-Oxide Interface.

Effective impurity behavior emergent from non-Hermitian proximity effect.

Anomalous quantization trajectory and parity anomaly in Co cluster decorated BiSbTeSe2 nanodevices.

The Material Efforts for Quantized Hall Devices Based on Topological Insulators.

Evidence of Both Surface and Bulk Dirac Bands and Anisotropic Nonsaturating Magnetoresistance in ZrSiS.

Quantum Electronics: Evidence of Both Surface and Bulk Dirac Bands and Anisotropic Nonsaturating Magnetoresistance in ZrSiS (Adv. Electron. Mater. 10/2016).