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Electron mobility in the GaAs/InGaAs/GaAs quantum wells.
Published in:
Semiconductor Physics, Quantum Electronics & Optoelectronics, 2013, v. 16, n. 2, p. 152
By:
- Vainberg, V. V.;
- Pylypchuk, A. S.;
- Baidus, N. V.;
- Zvonkov, B. N.
Publication type:
Article
Circularly polarized electroluminescence of quantum-size InGaAs/GaAs heterostructures with ferromagnetic metal-GaAs Schottky contacts.
Published in:
Technical Physics Letters, 2006, v. 32, n. 12, p. 1064, doi. 10.1134/S1063785006120200
By:
- Dorokhin, M. V.;
- Zaitsev, S. V.;
- Kulakovskii, V. D.;
- Baidus', N. V.;
- Danilov, Yu. A.;
- Demina, P. B.;
- Zvonkov, B. N.;
- Uskova, E. A.
Publication type:
Article
Dissipative Tunneling of Electrons in Vertically Coupled Double Asymmetric InAs/GaAs(001) Quantum Dots.
Published in:
Technical Physics, 2022, v. 67, n. 2, p. 115, doi. 10.1134/S1063784222010145
By:
- Semenov, M. B.;
- Krevchik, V. D.;
- Filatov, D. O.;
- Shorokhov, A. V.;
- Shkurinov, A. P.;
- Ozheredov, I. A.;
- Krevchik, P. V.;
- Wang, Y. H.;
- Li, T. R.;
- Malik, A. K.;
- Marychev, M. O.;
- Baidus, N. V.;
- Semenov, I. M.
Publication type:
Article
Effect of Surface Modification on the Properties of Hydrogen-Sensitive GaAs-Based Schottky Diodes.
Published in:
Technical Physics, 2003, v. 48, n. 5, p. 592, doi. 10.1134/1.1576473
By:
- Tikhov, S. V.;
- Shobolov, E. L.;
- Levichev, S. B.;
- Baidus, N. V.
Publication type:
Article
MOCVD Growth of InGaAs Metamorphic Heterostructures for Photodiodes with Low Dark Current.
Published in:
Semiconductors, 2024, v. 58, n. 5, p. 451, doi. 10.1134/S1063782624050130
By:
- Samartsev, I. V.;
- Zvonkov, B. N.;
- Baidus, N. V.;
- Chigineva, A. B.;
- Zhidyaev, K. S.;
- Dikareva, N. V.;
- Zdoroveyshchev, A. V.;
- Rykov, A. V.;
- Plankina, S. M.;
- Nezhdanov, A. V.;
- Ershov, A. V.
Publication type:
Article
Comparison of III–V Heterostructures Grown on Ge/Si, Ge/SOI, and GaAs.
Published in:
Semiconductors, 2022, v. 56, n. 2, p. 122, doi. 10.1134/S1063782622010171
By:
- Sushkov, A. A.;
- Pavlov, D. A.;
- Andrianov, A. I.;
- Shengurov, V. G.;
- Denisov, S. A.;
- Chalkov, V. Yu.;
- Kriukov, R. N.;
- Baidus, N. V.;
- Yurasov, D. V.;
- Rykov, A. V.
Publication type:
Article
GaAs-Based Laser Diode with InGaAs Waveguide Quantum Wells.
Published in:
Semiconductors, 2019, v. 53, n. 12, p. 1709, doi. 10.1134/S1063782619160085
By:
- Dikareva, N. V.;
- Zvonkov, B. N.;
- Samartsev, I. V.;
- Nekorkin, S. M.;
- Baidus, N. V.;
- Dubinov, A. A.
Publication type:
Article
Studies of the Cross Section and Photoluminescence of a GaAs Layer Grown on a Si/Al<sub>2</sub>O<sub>3</sub> Substrate.
Published in:
Semiconductors, 2019, v. 53, n. 9, p. 1242, doi. 10.1134/S1063782619090227
By:
- Sushkov, A. A.;
- Pavlov, D. A.;
- Shengurov, V. G.;
- Denisov, S. A.;
- Chalkov, V. Yu.;
- Baidus, N. V.;
- Rykov, A. V.;
- Kryukov, R. N.
Publication type:
Article
Submonolayer InGaAs/GaAs Quantum Dots Grown by MOCVD.
Published in:
Semiconductors, 2019, v. 53, n. 8, p. 1138, doi. 10.1134/S1063782619080037
By:
- Aleshkin, V. Ya.;
- Baidus, N. V.;
- Dubinov, A. A.;
- Kudryavtsev, K. E.;
- Nekorkin, S. M.;
- Kruglov, A. V.;
- Reunov, D. G.
Publication type:
Article
MOS-Hydride Epitaxy Growth of InGaAs/GaAs Submonolayer Quantum Dots for the Excitation of Surface Plasmon–Polaritons.
Published in:
Semiconductors, 2019, v. 53, n. 3, p. 326, doi. 10.1134/S1063782619030047
By:
- Baidus, N. V.;
- Kukushkin, V. A.;
- Nekorkin, S. M.;
- Kruglov, A. V.;
- Reunov, D. G.
Publication type:
Article
On the Application of Strain-Compensating GaAsP Layers for the Growth of InGaAs/GaAs Quantum-Well Laser Heterostructures Emitting at Wavelengths above 1100 nm on Artificial Ge/Si Substrates.
Published in:
Semiconductors, 2018, v. 52, n. 12, p. 1547, doi. 10.1134/S1063782618120060
By:
- Baidus, N. V.;
- Aleshkin, V. Ya.;
- Dubinov, A. A.;
- Krasilnik, Z. F.;
- Kudryavtsev, K. E.;
- Nekorkin, S. M.;
- Novikov, A. V.;
- Rykov, A. V.;
- Reunov, D. G.;
- Shaleev, M. V.;
- Yunin, P. A.;
- Yurasov, D. V.
Publication type:
Article
Technology of the production of laser diodes based on GaAs/InGaAs/AlGaAs structures grown on a Ge/Si substrate.
Published in:
Semiconductors, 2017, v. 51, n. 11, p. 1477, doi. 10.1134/S1063782617110057
By:
- Aleshkin, V.;
- Baidus, N.;
- Dubinov, A.;
- Kudryavtsev, K.;
- Nekorkin, S.;
- Novikov, A.;
- Rykov, A.;
- Samartsev, I.;
- Fefelov, A.;
- Yurasov, D.;
- Krasilnik, Z.
Publication type:
Article
Peculiarities of growing InGaAs/GaAs/AlGaAs laser structures by MOCVD on Ge/Si substrates.
Published in:
Semiconductors, 2017, v. 51, n. 11, p. 1527, doi. 10.1134/S1063782617110070
By:
- Baidus, N.;
- Aleshkin, V.;
- Dubinov, A.;
- Kudryavtsev, K.;
- Nekorkin, S.;
- Novikov, A.;
- Pavlov, D.;
- Rykov, A.;
- Sushkov, A.;
- Shaleev, M.;
- Yunin, P.;
- Yurasov, D.;
- Yablonskiy, A.;
- Krasilnik, Z.
Publication type:
Article
Optical thyristor based on GaAs/InGaP materials.
Published in:
Semiconductors, 2017, v. 51, n. 11, p. 1391, doi. 10.1134/S1063782617110306
By:
- Zvonkov, B.;
- Baidus, N.;
- Nekorkin, S.;
- Vikhrova, O.;
- Zdoroveyshev, A.;
- Kudrin, A.;
- Kotomina, V.
Publication type:
Article
On the stimulated emission of InGaAs/GaAs/AlGaAs laser structures grown by MOCVD on exact and inclined Ge/Si(001) substrates.
Published in:
Semiconductors, 2017, v. 51, n. 5, p. 663, doi. 10.1134/S1063782617050037
By:
- Aleshkin, V.;
- Baidus, N.;
- Dubinov, A.;
- Krasilnik, Z.;
- Nekorkin, S.;
- Novikov, A.;
- Rykov, A.;
- Yurasov, D.;
- Yablonskiy, A.
Publication type:
Article
Effect of active-region 'volume' on the radiative properties of laser heterostructures with radiation output through the substrate.
Published in:
Semiconductors, 2017, v. 51, n. 1, p. 73, doi. 10.1134/S1063782617010158
By:
- Nekorkin, S.;
- Zvonkov, B.;
- Baidus, N.;
- Dikareva, N.;
- Vikhrova, O.;
- Afonenko, A.;
- Ushakov, D.
Publication type:
Article
Stimulated emission in heterostructures with double InGaAs/GaAsSb/GaAs quantum wells, grown on GaAs and Ge/Si(001) substrates.
Published in:
Semiconductors, 2016, v. 50, n. 11, p. 1435, doi. 10.1134/S1063782616110269
By:
- Yablonsky, A.;
- Morozov, S.;
- Gaponova, D.;
- Aleshkin, V.;
- Shengurov, V.;
- Zvonkov, B.;
- Vikhrova, O.;
- Baidus', N.;
- Krasil'nik, Z.
Publication type:
Article
Nanoheterostructures with improved parameters for high-speed and efficient plasmon-polariton light emitting Schottky diodes.
Published in:
Semiconductors, 2016, v. 50, n. 11, p. 1554, doi. 10.1134/S1063782616110026
By:
- Baidus, N.;
- Kukushkin, V.;
- Zvonkov, B.;
- Nekorkin, S.
Publication type:
Article
Diagnostics of the efficiency of surface plasmon-polariton excitation by quantum dots via polarization measurements of the output radiation.
Published in:
Semiconductors, 2015, v. 49, n. 6, p. 785, doi. 10.1134/S1063782615060123
By:
- Kukushkin, V.;
- Baidus, N.;
- Zdoroveishchev, A.
Publication type:
Article
Emission properties of InGaAs/GaAs heterostructures with quantum wells and dots after irradiation with neutrons.
Published in:
Semiconductors, 2015, v. 49, n. 3, p. 358, doi. 10.1134/S1063782615030057
By:
- Baidus, N.;
- Vikhrova, O.;
- Zvonkov, B.;
- Malysheva, E.;
- Trufanov, A.
Publication type:
Article
Influence of the spatial arrangement of the Si δ layer on the optoelectronic properties of InGaAs/GaAs quantum-well nanoheterostructures.
Published in:
Semiconductors, 2015, v. 49, n. 2, p. 139, doi. 10.1134/S1063782615020232
By:
- Volkova, N.;
- Gorshkov, A.;
- Tikhov, S.;
- Baidus, N.;
- Khazanova, S.;
- Degtyarev, V.;
- Filatov, D.
Publication type:
Article
Exchange enhancement of the electron g factor in strained InGaAs/InP heterostructures.
Published in:
Semiconductors, 2015, v. 49, n. 2, p. 191, doi. 10.1134/S1063782615020141
By:
- Krishtopenko, S.;
- Maremyanin, K.;
- Kalinin, K.;
- Spirin, K.;
- Gavrilenko, V.;
- Baidus, N.;
- Zvonkov, B.
Publication type:
Article
Simulation of the effective concentration profiles in InGaAs/GaAs heterostructures containing δ-doped layers.
Published in:
Semiconductors, 2015, v. 49, n. 1, p. 50, doi. 10.1134/S1063782615010121
By:
- Khazanova, S.;
- Degtyarev, V.;
- Tikhov, S.;
- Baidus, N.
Publication type:
Article
Influence of the technological parameters of growth on the characteristics of double tunnel-coupled InGaAs/GaAs quantum wells.
Published in:
Semiconductors, 2015, v. 49, n. 1, p. 55, doi. 10.1134/S1063782615010133
By:
- Khazanova, S.;
- Degtyarev, V.;
- Malekhonova, N.;
- Pavlov, D.;
- Baidus, N.
Publication type:
Article
Structural, optical, and current investigations of superlattices with a complex AlGaAs-based unit cell.
Published in:
Semiconductors, 2015, v. 49, n. 1, p. 118, doi. 10.1134/S1063782615010236
By:
- Romanova, Yu.;
- Dodin, E.;
- Nozdrin, Yu.;
- Biryukov, A.;
- Baidus, N.;
- Pavlov, D.;
- Malekhonova, N.
Publication type:
Article
Far-infrared radiation from n-InGaAs/GaAs quantum-well heterostructures in high lateral electric fields under injection conditions.
Published in:
Semiconductors, 2014, v. 48, n. 5, p. 625, doi. 10.1134/S1063782614050029
By:
- Belevskii, P.;
- Vinoslavkii, M.;
- Poroshin, V.;
- Baidus, N.;
- Zvonkov, B.
Publication type:
Article
Rashba spin splitting and cyclotron resonance in strained InGaAs/InP heterostructures with a two-dimensional electron gas.
Published in:
Semiconductors, 2013, v. 47, n. 11, p. 1485, doi. 10.1134/S1063782613110092
By:
- Kalinin, K.;
- Krishtopenko, S.;
- Maremyanin, K.;
- Spirin, K.;
- Gavrilenko, V.;
- Biryukov, A.;
- Baidus, N.;
- Zvonkov, B.
Publication type:
Article
MOCVD-grown heterostructures with GaAs/AlGaAs Superlattices: Growth features and optical and transport characteristics.
Published in:
Semiconductors, 2013, v. 47, n. 1, p. 158, doi. 10.1134/S1063782612120032
By:
- Baidus, N.;
- Biryukov, A.;
- Dodin, E.;
- Drozdov, Yu.;
- Drozdov, M.;
- Nozdrin, Yu.;
- Andronov, A.
Publication type:
Article
Long-term photoconductivity decay in n-InGaAs/GaAs heterostructures with coupled quantum wells under band-to-band excitation.
Published in:
Semiconductors, 2013, v. 47, n. 1, p. 174, doi. 10.1134/S1063782612120196
By:
- Vainberg, V.;
- Vasetskii, V.;
- Gudenko, Yu.;
- Poroshin, V.;
- Baidus, N.;
- Zvonkov, B.
Publication type:
Article
Tunnel-coupled InGaAs/GaAs quantum wells: Structure, composition, and energy spectrum.
Published in:
Semiconductors, 2012, v. 46, n. 12, p. 1476, doi. 10.1134/S106378261212007X
By:
- Khazanova, S.;
- Baidus', N.;
- Zvonkov, B.;
- Pavlov, D.;
- Malekhonova, N.;
- Degtyarev, V.;
- Smotrin, D.;
- Bobrov, I.
Publication type:
Article
Determination of the electron concentration and mobility in the vicinity of a quantum well and δ-doped layer in InGaAs/GaAs heterostructures.
Published in:
Semiconductors, 2012, v. 46, n. 12, p. 1497, doi. 10.1134/S1063782612120160
By:
- Tikhov, S.;
- Baidus, N.;
- Biryukov, A.;
- Khazanova, S.
Publication type:
Article
Admittance spectroscopy of ring diode InGaAs/InAlAs/InP quantum-well structures.
Published in:
Semiconductors, 2012, v. 46, n. 12, p. 1524, doi. 10.1134/S1063782612120172
By:
- Tikhov, S.;
- Baidus, N.;
- Biryukov, A.;
- Degtyarev, V.
Publication type:
Article
Transport properties of InGaAs/GaAs Heterostructures with δ-doped quantum wells.
Published in:
Semiconductors, 2012, v. 46, n. 5, p. 631, doi. 10.1134/S1063782612050053
By:
- Baidus, N.;
- Vainberg, V.;
- Zvonkov, B.;
- Pylypchuk, A.;
- Poroshin, V.;
- Sarbey, O.
Publication type:
Article
Lateral transport and far-infrared radiation of electrons in InGaAs/GaAs heterostructures with the double tunnel-coupled quantum wells in a high electric field.
Published in:
Semiconductors, 2010, v. 44, n. 11, p. 1495, doi. 10.1134/S1063782610110230
By:
- Baidus, N.;
- Belevskii, P.;
- Biriukov, A.;
- Vainberg, V.;
- Vinoslavskii, M.;
- Ikonnikov, A.;
- Zvonkov, B.;
- Pylypchuk, A.;
- Poroshin, V.
Publication type:
Article
Tuning the Energy Spectrum of InAs/GaAs Quantum Dots by Varying the Thickness and Composition of the Thin Double GaAs/InGaAs Cladding Layer.
Published in:
Semiconductors, 2004, v. 38, n. 4, p. 431, doi. 10.1134/1.1734670
By:
- Karpovich, I. A.;
- Levichev, B. N.;
- Levichev, S. B.;
- Baidus, N. V.;
- Tikhov, S. V.;
- Filatov, D. O.;
- Gorshkov, A. P.;
- Ermakov, S. Yu.
Publication type:
Article
Segregation of Indium in InGaAs/GaAs Quantum Wells Grown by Vapor-Phase Epitaxy.
Published in:
Semiconductors, 2003, v. 37, n. 2, p. 194, doi. 10.1134/1.1548664
By:
- Drozdov, Yu. N.;
- Baıdus’, N. V.;
- Zvonkov, B. N.;
- Drozdov, M. N.;
- Khrykin, O. I.;
- Shashkin, V. I.
Publication type:
Article
Influence of Bismuth Doping of InAs Quantum-Dot Layer on the Morphology and Photoelectronic Properties of Gas/InAs Heterostructures Grown by Metal-Organic Chemical Vapor Deposition.
Published in:
Semiconductors, 2001, v. 35, n. 1, p. 93, doi. 10.1134/1.1340297
By:
- Zvonkov, B. N.;
- Karpovich, I. A.;
- Baıdus’, N. V.;
- Filatov, D. O.;
- Morozov, S. V.
Publication type:
Article
Protein crystal growth on the Russian segment of the International Space Station.
Published in:
Crystallography Reports, 2009, v. 54, n. 5, p. 901, doi. 10.1134/S106377450905023X
By:
- Smirnova, E. A.;
- Kislitsyn, Yu. A.;
- Sosfenov, N. I.;
- Lyashenko, A. V.;
- Popov, A. N.;
- Baĭdus', A. N.;
- Timofeev, V. I.;
- Kuranova, I. P.
Publication type:
Article
Electrical spin-injection and depolarization mechanisms in forward biased ferromagnetic Schottky diodes.
Published in:
Physica Status Solidi (B), 2009, v. 246, n. 5, p. 1132, doi. 10.1002/pssb.200844353
By:
- Zaitsev, S. V.;
- Dorokhin, M. V.;
- Demina, P. B.;
- Baidus, N. V.;
- Uskova, E. A.;
- Zvonkov, B. N.
Publication type:
Article
The dependence of relaxation kinetics of photoluminescence from interband transitions in InGaAs/GaAs quantum wells on their distance from an interface with Au.
Published in:
Optics & Spectroscopy, 2017, v. 123, n. 5, p. 754, doi. 10.1134/S0030400X17110145
By:
- Kukushkin, V.;
- Baidus, N.;
- Nekorkin, S.;
- Kuritsyn, D.;
- Zdoroveischev, A.
Publication type:
Article
Field effect as a method for controlling the quality of i-InP-based heteronanostructures with two-dimensional electron gases.
Published in:
Journal of Surface Investigation: X-Ray, Synchrotron & Neutron Techniques, 2012, v. 6, n. 6, p. 961, doi. 10.1134/S1027451012120129
By:
- Tikhov, S.;
- Baidus', N.;
- Biryukov, A.;
- Zvonkov, B.;
- Drozdov, Yu.;
- Smotrin, D.;
- Testov, V.
Publication type:
Article
Injection electroluminescence from quantum-size InGaAs/GaAs structures with metal/semiconductor and metal-oxide-semiconductor junctions.
Published in:
Journal of Surface Investigation: X-Ray, Synchrotron & Neutron Techniques, 2010, v. 4, n. 3, p. 390, doi. 10.1134/S1027451010030067
By:
- Dorokhin, M.;
- Demina, P.;
- Baidus’, N.;
- Danilov, Yu.;
- Zvonkov, B.;
- Prokof’eva, M.
Publication type:
Article
Effect of the AlGaAs Seed Layer Composition on Antiphase Domains Formation in (Al)GaAs Structures Grown by Vapor-Phase Epitaxy on Ge/Si(100) Substrates.
Published in:
Technical Physics Letters, 2021, v. 47, n. 5, p. 413, doi. 10.1134/S1063785021040283
By:
- Rykov, A. V.;
- Kryukov, R. N.;
- Samartsev, I. V.;
- Yunin, P. A.;
- Shengurov, V. G.;
- Zaitsev, A. V.;
- Baidus', N. V.
Publication type:
Article
Stimulated Emission at 1.3-μm Wavelength in Metamorphic InGaAs/InGaAsP Structure with Quantum Wells Grown on Ge/Si(001) Substrate.
Published in:
Technical Physics Letters, 2018, v. 44, n. 8, p. 735, doi. 10.1134/S1063785018080175
By:
- Aleshkin, V. Ya.;
- Baidus, N. V.;
- Vikhrova, O. V.;
- Dubinov, A. A.;
- Zvonkov, B. N.;
- Krasilnik, Z. F.;
- Kudryavtsev, K. E.;
- Nekorkin, S. M.;
- Novikov, A. V.;
- Rykov, A. V.;
- Samartsev, I. V.;
- Yurasov, D. V.
Publication type:
Article

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