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Ferroelectricity Improvement in Ultra‐Thin Hf<sub>0.5</sub>Zr<sub>0.5</sub>O<sub>2</sub> Capacitors by the Insertion of a Ti Interfacial Layer.
- Published in:
- Physica Status Solidi - Rapid Research Letters, 2022, v. 16, n. 10, p. 1, doi. 10.1002/pssr.202270019
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- Article
Insertion of an Ultrathin Interfacial Aluminum Layer for the Realization of a Hf0.5Zr0.5O2 Ferroelectric Tunnel Junction.
- Published in:
- Physica Status Solidi - Rapid Research Letters, 2022, v. 16, n. 10, p. 1, doi. 10.1002/pssr.202100585
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- Publication type:
- Article
Ferroelectricity Improvement in Ultra‐Thin Hf<sub>0.5</sub>Zr<sub>0.5</sub>O<sub>2</sub> Capacitors by the Insertion of a Ti Interfacial Layer.
- Published in:
- Physica Status Solidi - Rapid Research Letters, 2022, v. 16, n. 10, p. 1, doi. 10.1002/pssr.202100583
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- Publication type:
- Article
Reversible Single‐Pulse Laser‐Induced Phase Change of Sb<sub>2</sub>S<sub>3</sub> Thin Films: Multi‐Physics Modeling and Experimental Demonstrations.
- Published in:
- Advanced Optical Materials, 2024, v. 12, n. 28, p. 1, doi. 10.1002/adom.202401214
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- Article
Physical Origin of Negative Differential Resistance in V<sub>3</sub>O<sub>5</sub> and Its Application as a Solid‐State Oscillator.
- Published in:
- Advanced Materials, 2023, v. 35, n. 8, p. 1, doi. 10.1002/adma.202208477
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- Article