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Liquid-Phase Synthesis and Properties of Constant Lattice Parameter AlGaInAsP Solid Solutions on Indium Phosphide Substrates.
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- Inorganic Materials, 2019, v. 55, n. 6, p. 533, doi. 10.1134/S0020168519060013
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AlGaInSbAs Solid Solutions Grown on InAs Substrates by Zone Recrystallization with a Temperature Gradient.
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- Semiconductors, 2020, v. 54, n. 7, p. 759, doi. 10.1134/S1063782620070088
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Effect of Bismuth on the Properties of Elastically Stressed AlGaInAsP〈Bi〉/InP Heterostructures.
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- Semiconductors, 2019, v. 53, n. 8, p. 1088, doi. 10.1134/S1063782619080141
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On the Properties of Isoparametric AlInGaAsP/InP Heterostructures.
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- Semiconductors, 2019, v. 53, n. 7, p. 887, doi. 10.1134/S1063782619070029
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Thin-Layer InAlPSbAs/InAs Heterostructures: Growth Kinetics, Morphology, and Structure.
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- Journal of Surface Investigation: X-Ray, Synchrotron & Neutron Techniques, 2023, v. 17, n. 2, p. 419, doi. 10.1134/S1027451023020301
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The Study of GaInAsP/InP Heterostructures with an Array of InAs Nanoislands.
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- Journal of Surface Investigation: X-Ray, Synchrotron & Neutron Techniques, 2021, v. 15, n. 6, p. 1290, doi. 10.1134/S1027451021060276
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Morphology and Structural Properties of AlGaInSbAs Epitaxial Films Grown on InAs Substrates.
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- Journal of Surface Investigation: X-Ray, Synchrotron & Neutron Techniques, 2021, v. 15, n. 3, p. 441, doi. 10.1134/S1027451021030137
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Effect of Bismuth on the Structural Perfection of Elastically Strained AlGaInSbBi Epitaxial Layers Grown on InSb Substrates.
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- Journal of Surface Investigation: X-Ray, Synchrotron & Neutron Techniques, 2020, v. 14, n. 4, p. 771, doi. 10.1134/S1027451020040217
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Investigation of Ge<sub>x</sub>Si<sub>1 –</sub><sub>x</sub>/Si Nanoheterostructures Grown by Ion-Beam Deposition.
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- Journal of Surface Investigation: X-Ray, Synchrotron & Neutron Techniques, 2019, v. 13, n. 3, p. 493, doi. 10.1134/S1027451019030236
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Investigation of the Structural Perfection of Thin-Film InAlGaPAs/GaAs Heterostructures.
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- Journal of Surface Investigation: X-Ray, Synchrotron & Neutron Techniques, 2018, v. 12, n. 3, p. 466, doi. 10.1134/S1027451018030047
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Al<sub>x</sub>In<sub>y</sub>Ga<sub>1 – x – y</sub>P<sub>z</sub>As<sub>1 – z</sub>/GaAs Graded-Gap Heterostructures for Photovoltaic Converters.
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- Technical Physics Letters, 2022, v. 48, n. 2, p. 82, doi. 10.1134/S1063785022030087
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Isoperiodic Ga<sub>x</sub>In<sub>1 –</sub><sub>x</sub>Sb<sub>y</sub>As<sub>z</sub>P<sub>1 –</sub><sub>y</sub><sub>–</sub><sub>z</sub>/InP Heterostructures for Planar p–n Photodiodes.
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- Technical Physics Letters, 2020, v. 46, n. 10, p. 979, doi. 10.1134/S1063785020100077
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Heterostructures Ga<sub>x</sub>In<sub>1 –</sub><sub>x</sub>As<sub>y</sub>Bi<sub>z</sub>Sb<sub>1 –</sub><sub>y</sub><sub>–</sub><sub>z</sub>/InSb for Photodetector Devices.
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- Technical Physics Letters, 2019, v. 45, n. 8, p. 823, doi. 10.1134/S1063785019080285
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Cascade Solar Cells Based on GaP/Si/Ge Nanoheterostructures.
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- Technical Physics Letters, 2019, v. 45, n. 3, p. 250, doi. 10.1134/S1063785019030313
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AlInGaPAs/GaAs/Si Heterostructures for Photoelectric Converters Fabricated by Pulsed Laser Deposition.
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- Technical Physics Letters, 2018, v. 44, n. 12, p. 1154, doi. 10.1134/S1063785018120519
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AlInPSbAs/InAs Heterostructures for Thermophotoelectric Converters.
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- Technical Physics Letters, 2018, v. 44, n. 12, p. 1049, doi. 10.1134/S1063785018120301
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- Article