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Ion-Implantation-Induced Damage Characteristics Within AlN and Si for GaN-on-Si Epitaxy.
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- Journal of Electronic Materials, 2013, v. 42, n. 5, p. 833, doi. 10.1007/s11664-013-2491-5
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Design and Growth of Visible-Blind and Solar-Blind III-N APDs on Sapphire Substrates.
- Published in:
- Journal of Electronic Materials, 2013, v. 42, n. 5, p. 854, doi. 10.1007/s11664-013-2537-8
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- Article