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- Title
Evolution of the current-voltage characteristics of photoluminescing porous silicon during chemical etching.
- Authors
Gorbach, T. Ya.; Svechnikov, S. V.; Smertenko, P. S.; Tul’chinskiı, P. G.; Bondarenko, A. V.; Volchek, S. A.; Dorofeev, A. M.; Masini, G.; Maiello, G.; La Monica, S.; Ferrari, A.
- Abstract
It has been established that chemical etching of porous silicon in HF results in a large change in the current-voltage characteristics and photoluminescence parameters of the silicon. The results of the investigation can be used to increase the efficiency of electroluminescence structures In-〈porous Si〉-Al by increasing the injection level of minority carriers and realizing a regime of double injection and high surface recombination rate near the surface of porous silicon.
- Subjects
POROUS silicon; PHOTOLUMINESCENCE
- Publication
Semiconductors, 1997, Vol 31, Issue 12, p1221
- ISSN
1063-7826
- Publication type
Article
- DOI
10.1134/1.1187297