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- Title
Investigations on the high performance of InGaN red micro-LEDs with single quantum well for visible light communication applications.
- Authors
Hsiao, Fu-He; Lee, Tzu-Yi; Miao, Wen-Chien; Pai, Yi-Hua; Iida, Daisuke; Lin, Chun-Liang; Chen, Fang-Chung; Chow, Chi-Wai; Lin, Chien-Chung; Horng, Ray-Hua; He, Jr-Hau; Ohkawa, Kazuhiro; Hong, Yu-Heng; Chang, Chiao-Yun; Kuo, Hao-Chung
- Abstract
In this study, we have demonstrated the potential of InGaN-based red micro-LEDs with single quantum well (SQW) structure for visible light communication applications. Our findings indicate the SQW sample has a better crystal quality, with high-purity emission, a narrower full width at half maximum, and higher internal quantum efficiency, compared to InGaN red micro-LED with a double quantum wells (DQWs) structure. The InGaN red micro-LED with SQW structure exhibits a higher maximum external quantum efficiency of 5.95% and experiences less blueshift as the current density increases when compared to the DQWs device. Furthermore, the SQW device has a superior modulation bandwidth of 424 MHz with a data transmission rate of 800 Mbit/s at an injection current density of 2000 A/cm2. These results demonstrate that InGaN-based SQW red micro-LEDs hold great promise for realizing full-color micro-display and visible light communication applications.
- Subjects
OPTICAL communications; VISIBLE spectra; INDIUM gallium nitride; QUANTUM efficiency; DATA transmission systems
- Publication
Discover Nano, 2023, Vol 18, Issue 1, p1
- ISSN
2731-9229
- Publication type
Article
- DOI
10.1186/s11671-023-03871-z