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- Title
Hyperfine Interaction and Shockley–Read–Hall Recombination in Semiconductors.
- Authors
Ivchenko, E. L.; Kalevich, V. K.; Kunold, A.; Balocchi, A.; Marie, X.; Amand, T.
- Abstract
Experimental and theoretical studies on optical orientation and spin-dependent recombination in a semiconductor in a magnetic field under the normal incidence of circularly polarized radiation onto the sample surface are reviewed. The experiments were carried out on GaAs1 –xNx solid solutions, in which Ga2+ interstitial displacement defects play the role of deep paramagnetic centers responsible for spin-dependent recombination. It is established that, in the investigated materials, the hyperfine interaction of a localized electron with one nucleus of the paramagnetic center remains strong even at room temperature. The theory is compared with an experiment conducted in the steady-state excitation mode and under two-pulse pump-probe conditions. An analytical formula for spin beats in a magnetic field is derived.
- Subjects
HYPERFINE interactions; MAGNETIC semiconductors; MAGNETIC fields; SEMICONDUCTORS; SOLID solutions; PARAMAGNETIC materials
- Publication
Semiconductors, 2019, Vol 53, Issue 9, p1175
- ISSN
1063-7826
- Publication type
Article
- DOI
10.1134/S1063782619090070