We found a match
Your institution may have rights to this item. Sign in to continue.
- Title
Technology of the production of laser diodes based on GaAs/InGaAs/AlGaAs structures grown on a Ge/Si substrate.
- Authors
Aleshkin, V.; Baidus, N.; Dubinov, A.; Kudryavtsev, K.; Nekorkin, S.; Novikov, A.; Rykov, A.; Samartsev, I.; Fefelov, A.; Yurasov, D.; Krasilnik, Z.
- Abstract
InGaAs/GaAs/AlGaAs laser diodes with quantum wells are grown by the metal-organic chemical vapor deposition (MOCVD) method on an exact Si (001) substrate with a Ge buffer layer. The diodes generate stimulated emission in the pulsed mode at room temperature in the spectral range from 1.09 to 1.11 μm.
- Subjects
QUANTUM wells; ENERGY-band theory of solids; POTENTIAL theory (Physics); COLD fusion; SEMICONDUCTOR lasers
- Publication
Semiconductors, 2017, Vol 51, Issue 11, p1477
- ISSN
1063-7826
- Publication type
Article
- DOI
10.1134/S1063782617110057