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- Title
Hot carrier photoluminescence in InN epilayers.
- Authors
Yang, M. D.; Chen, Y. P.; Shu, G. W.; Shen, J. L.; Hung, S. C.; Chi, G. C.; Lin, T. Y.; Lee, Y. C.; Chen, C. T.; Ko, C. H.
- Abstract
The energy relaxation of electrons in InN epilayers is investigated by excitation- and electric field-dependent photoluminescence (PL). From the high-energy tail of PL, we determine the electron temperature of the hot carriers. It was found that the electron temperature variation can be explained by a model in which the longitudinal optical (LO)-phonon emission is the dominant energy relaxation process. The LO-phonon lifetime is fitted to be 0.89 ps, which is higher than the theoretical phonon lifetime. This deviation is attributed to the presence of the non-equilibrium hot-phonon effects.
- Subjects
HOT carriers; PHOTOLUMINESCENCE; INDIUM; ELECTRONIC excitation; ELECTRIC fields; ELECTRON temperature; PHONONS
- Publication
Applied Physics A: Materials Science & Processing, 2008, Vol 90, Issue 1, p123
- ISSN
0947-8396
- Publication type
Article
- DOI
10.1007/s00339-007-4281-5