We found a match
Your institution may have rights to this item. Sign in to continue.
- Title
Influence of boron doping on the photosensitivity of cubic silicon carbide.
- Authors
Rodionov, V. N.; Bratus', V. Ya.; Voronov, S. O.
- Abstract
Photoelectric properties have been studied for 3-SiC single crystals obtained by thermal decomposition of methyl trichlorosilane with addition of boron in the process of growing or using diffusion into intentionally undoped crystals. Boron-doped samples demonstrate the band of photosensitivity within the range 1.3...2.0 eV with the peak near 1.7 eV. Doping of 3-SiC single crystals with B impurity leads to appearance of an efficient recombination center with the thermal activation energy 0.27 ± 0.02 eV inside the band gap and to widening the spectral sensitivity of the material over the impurity longwave range. Availability of boron results in changing the temperature dependence of photoconductivity from the decay characteristic to the activation one. It will allow expanding the operation range of devices based on 3C-SiC<B> up to 500 °C and above it. In addition, the lux-ampere characteristics becomes linear, i.e., more convenient from the metrological viewpoint. Depending on the type of doping of 3C-SiC<B> samples, pronounced variations of line positions in photoluminescence spectra in near-infrared range are revealed.
- Subjects
PHOTOSENSITIVITY; BORON; SPECTRAL sensitivity; HEAT; SINGLE crystals; SILICON carbide
- Publication
Semiconductor Physics, Quantum Electronics & Optoelectronics, 2019, Vol 22, Issue 1, p92
- ISSN
1560-8034
- Publication type
Article
- DOI
10.15407/spqeo22.01.92