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- Title
Disappearance of aligning properties of deposited SiO<sub>x</sub> films as caused by external factors.
- Authors
Kolomzarov, Yu.; Oleksenko, P.; Sorokin, V.; Tytarenko, P.; Zelinskyy, R.
- Abstract
Thermal and degradation stability of SiOx aligning films deposited by cathode reactive sputtering (CRS) in glow discharge plasma were investigated. It was shown that a heat treatment and other external factors initiate transformations on the surface of aligning film and provided new conditions at the interface. This leads to a change of slight axis orientation direction of LC molecules and appearance of various defects in the LC aligned structures. The technological ways to increase the aligning layer durability under influence of external factors were proposed.
- Subjects
SILICON oxide; OXIDES; CATHODES; GLOW discharges; PLASMA gases; MOLECULES
- Publication
Semiconductor Physics, Quantum Electronics & Optoelectronics, 2006, Vol 9, Issue 3, p60
- ISSN
1560-8034
- Publication type
Article
- DOI
10.15407/spqeo9.03.060