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- Title
Active region of CdTe X-/γ-ray detector with Schottky diode.
- Authors
Kosyachenko, L. A.; Maslyanchuk, O. L.
- Abstract
It has been shown from the Poisson equation that the presence of deep levels in the semiconductor bandgap influences in a complicated maimer upon distribution of the space charge, potential and electrical fields in the Schottky diode. Under high reverse bias, however, the diode characteristics become standard. To achieve semi-insulating conductivity in CdTe, it is impossible to widen considerably the depleted layer in the diode. Therefore, the region of the high electric field is only a small part of the substrate thickness. Too small capacitance value and its weak dependence on the bias voltage observed in the Schottky diode made of semi-insulating CdTe are a result of the effect of the substrate resistance and the wide space charge region in the diode.
- Subjects
DIODES; ELECTRONS; IONS; SPACE charge; ELECTRIC fields; ELECTROMAGNETIC fields
- Publication
Semiconductor Physics, Quantum Electronics & Optoelectronics, 2005, Vol 8, Issue 2, p45
- ISSN
1560-8034
- Publication type
Article