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- Title
Influence of sulfurization pressure on structural and electrical property of CuZnSnS thin film and solar cell.
- Authors
Li, Jinze; shen, Honglie; Li, Yufang; Yao, Hanyu; Wang, Wei; Wu, Wenwen; Ren, Zheng
- Abstract
Effects of sulfurization pressure on structural and electrical property of CuZnSnS (CZTS) thin film prepared by sulfurizing co-sputtered Cu-Zn-Sn-S precursor were investigated. X-ray diffraction patterns and Raman spectra confirmed the shrinkage of lattice and compressive stress forming in low pressure sulfurized CZTS thin film, which prevented the overgrowing of grains along vertical direction. In addition, low pressure sulfurization could reduce the number of small grains in film. Thus CZTS solar cell based on low pressure sulfurized CZTS thin film obtained a 124 % enhancement in conversion efficiency. Temperature-dependent conductivity measurement revealed the mechanism of the improvement in CZTS solar cell by low pressure sulfurization, which was due to the promotion of V forming and the removal of localized states in defect band.
- Subjects
ELECTRIC properties of thin films; ELECTRIC properties of solids; X-ray diffraction; RAMAN spectra; ELECTRIC conductivity; SOLAR cells
- Publication
Journal of Materials Science: Materials in Electronics, 2016, Vol 27, Issue 8, p8688
- ISSN
0957-4522
- Publication type
Article
- DOI
10.1007/s10854-016-4890-x