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- Title
Absorption enhancement of near infrared in Te doped nanoporous silicon.
- Authors
Su, Yuanjie; Zhang, Peng; Jiang, Jing; Li, Shibin; Wu, Zhiming; Jiang, Yadong
- Abstract
In this paper, the optical properties of Te doped nanoporous silicon have been studied. The nanoporous silicon was fabricated by using alkaline etching and electrochemical anodization. The etched nanoporous silicon was injected with Te atoms by ion implantation. These nanostructures formed in electrochemical anodization directly affect the optical properties of nanoporous silicon such as reflectance, transmittance and absorptance. According to the optical measurement, the absorptance of the Te doped nanoporous silicon is over 80 % in the wavelength range from 250 to 1,100 nm. The absorptance of Te doped nanoporous silicon at wavelength longer than 1,100 nm is almost four times of that of untreated silicon, indicating that the ion implantation of Te element increases the NIR absorption of nanoporous silicon considerably.
- Subjects
TELLURIUM; ABSORPTION; NEAR infrared spectroscopy; DOPED semiconductors; NANOPOROUS materials; POROUS silicon; ELECTROCHEMISTRY
- Publication
Journal of Materials Science: Materials in Electronics, 2013, Vol 24, Issue 7, p2197
- ISSN
0957-4522
- Publication type
Article
- DOI
10.1007/s10854-013-1079-4