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- Title
IZO/Al/GZO multilayer films to replace ITO films.
- Authors
Chongmu Lee; R. P. Dwivedi; Wangwoo Lee; Chanseok Hong; Wan In Lee; Hyoun Woo Kim
- Abstract
Multilayer transparent conducting oxide (TCO) film structures have been designed and fabricated to achieve both high conductivity and high transmittance. In this article we report a buffering method and introduction of an aluminum (Al) interlayer to enhance the electrical conductivity of the IZO/Al/GZO/ZnO multilayer film on glass. Hall measurement results show that this multilayer film has a remarkable increase in mobility compared to those without using an Al interlayer. The surface morphology shows a decrease in surface roughness as the Al layer thickness increases. We have shown that the use of a thin Al interlayer enhances the electrical conductivity without sacrificing its optical transmittance much. By optimizing the thickness of the Al layer, the lowest resistivity of 2.2 × 10−4 Ω cm and an average transmittance higher than 75% in a range from 400 to 800 nm have been achieved. These properties are acceptable for future TCO applications.
- Subjects
MULTILAYERED thin films; SEMICONDUCTOR films; ELECTROMETALLURGY of aluminum; TRANSPARENT electronics; OXIDE electrodes; ELECTRIC conductivity; ELECTRON mobility; NILOTASPIS halli; SURFACE roughness; GLASS
- Publication
Journal of Materials Science: Materials in Electronics, 2008, Vol 19, Issue 10, p981
- ISSN
0957-4522
- Publication type
Article
- DOI
10.1007/s10854-007-9430-2