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- Title
High-density via RRAM cell with multi-level setting by current compliance circuits.
- Authors
Hsieh, Yu-Cheng; Lin, Yu-Cheng; Huang, Yao-Hung; Chih, Yu-Der; Chang, Jonathan; Lin, Chrong-Jung; King, Ya-Chin
- Abstract
In this work, multi-level storage in the via RRAM has been first time reported and demonstrated with the standard FinFET CMOS logic process. Multi-level states in via RRAM are achieved by controlling the current compliance during set operations. The new current compliance setting circuits are proposed to ensure stable resistance control when one considers cells under the process variation effect. The improved stability and tightened distributions on its multi-level states on via RRAM have been successfully demonstrated.
- Subjects
COMPLEMENTARY metal oxide semiconductors
- Publication
Discover Nano, 2024, Vol 19, Issue 1, p1
- ISSN
2731-9229
- Publication type
Article
- DOI
10.1186/s11671-023-03881-x