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- Title
Structural and noise characterization of VO[sub 2] films on SiO[sub 2]/Si substrates.
- Authors
Baıdakova, M. V.; Bobyl’, A. V.; Malyarov, V. G.; Tret’yakov, V. V.; Khrebtov, I. A.; Shaganov, I. I.
- Abstract
Multi-technique structural and electro-physical investigations of VO[sub 2] films on SiO[sub 2]/Si substrates are carried out to study the microscopic nature of fluctuator defects — sources of low-frequency flicker noise. It is established that the noise intensity is determined by the magnitude of the microstress fluctuations 〈ε〉={〈(δc/c)[sup 2]〉}, where c is the lattice parameter along the c-axis parallel to [011] direction in the blocks of which the film is formed. The dimensions of the blocks were determined in the direction of the c-axis (t[sub c]∼1000 Å). The suggestion is put forward that the samples contain two types of fluctuator defects: 1) V atoms jumping between the two nearest interstitial sites and 2) V atoms jumping between these interstitial sites near lattice defects.
- Subjects
VANADIUM oxide; THIN films; SILICON compounds; ELECTROMAGNETIC noise
- Publication
Technical Physics Letters, 1997, Vol 23, Issue 7, p520
- ISSN
1063-7850
- Publication type
Article
- DOI
10.1134/1.1261815