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- Title
Perovskite Metal–Oxide–Semiconductor Structures for Interface Characterization (Adv. Mater. Interfaces 20/2021).
- Authors
Cunha, José M. V.; Barreiros, M. Alexandra; Curado, Marco A.; Lopes, Tomás S.; Oliveira, Kevin; Oliveira, António J. N.; Barbosa, João R. S.; Vilanova, António; Brites, Maria João; Mascarenhas, João; Flandre, Denis; Silva, Ana G.; Fernandes, Paulo A.; Salomé, Pedro M. P.
- Abstract
Metal-oxide-semiconductors, perovskite and charge carrier transport layer interface, SnO 2/perovskite interface traps Keywords: metal-oxide-semiconductors; perovskite and charge carrier transport layer interface; SnO 2/perovskite interface traps EN metal-oxide-semiconductors perovskite and charge carrier transport layer interface SnO 2/perovskite interface traps 1 1 1 10/26/21 20211022 NES 211022 B Perovskite MOS Structures b In article number 2101004, José M. V. Cunha and co-workers demonstrate that AC measurements performed on metal-oxide-semiconductor devices (MOS) allow for the study of the density of interface defects and interface fixed oxide charges present in the electron transport layer/perovskite interface, allowing for the development of highly-efficient perovskite solar cells, which have several applications, e.g., build-integrated photovoltaics. Perovskite Metal-Oxide-Semiconductor Structures for Interface Characterization (Adv.
- Subjects
INTERFACE structures; PEROVSKITE; CHARGE carriers; ELECTRON transport; SOLAR cells; METAL oxide semiconductor capacitors
- Publication
Advanced Materials Interfaces, 2021, Vol 8, Issue 20, p1
- ISSN
2196-7350
- Publication type
Article
- DOI
10.1002/admi.202170113