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- Title
Laser induced diffusion of indium in silicon.
- Authors
Hamoudi, W. K.; Ali, R. O.
- Abstract
In this work, a 300 μs pulsed Nd:YAG laser was employed to induce indium diffusion in silicon wafer. Electrical properties were studied for a range of laser pulse energies (0.225–0.369 J) and substrate temperature (300–398°k). The four point probe measurements showed that a minimum sheet resistance (54 Ω/□) was resulted at the melting threshold energy and room temperature. The sheet resistance was a decreasing function of the temperature rise of the substrate. The ( I- V) and ( C- V) measurements expressed improvement in the characteristics of the fabricated diodes when substrate temperature rises and irradiating pulse energy increases up to melting threshold value after which these characteristics starts to deteriorate.
- Subjects
LASER photochemistry; INDIUM; ELECTRIC properties of silicon; ND-YAG lasers; SUBSTRATES (Materials science); LASER fusion; DIODES
- Publication
Journal of Materials Science, 2000, Vol 35, Issue 23, p5951
- ISSN
0022-2461
- Publication type
Article
- DOI
10.1023/A:1026726324128