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- Title
Flip-chip bonding and fabrication of well-ordered nanocolumn arrays on sputter-deposited AlN/Si (111) substrate.
- Authors
Hayashi, Hiroaki; Fukushima, Daishi; Tomimatsu, Daisuke; Noma, Tomohiro; Konno, Yuta; Kishino, Katsumi
- Abstract
Employing a thin AlN film sputter-deposited on Si substrates, well-ordered GaN nanocolumn arrays were demonstrated by RF-plasma-assisted molecular-beam-epitaxy selective-area growth. Dislocation-free crystals were grown even on this cost-effective framework, which included high-density threading dislocations (>3 × 1011 cm−2), by applying nanocolumn growth techniques. Single-peak PL spectra from integrated InGaN/GaN MQW were obtained in red region and the peak wavelength changed from 640 to 690 nm with increasing nanocolumn diameter. This framework also contributes to a fabrication of vertical injection type flip-chip structure, even if a nanocolumn device. Damage-free wet-etching removal of Si substrates resulted in exposure of flip-chip well-ordered nanocolumns array. (a) TEM image of nanocolumns array on sputter-deposited thin AlN film/Si (111) substrate. (b) SEM image of flip-chip well-ordered nanocolumns array.
- Subjects
THIN films; SILICON; GALLIUM; WAVELENGTHS; CRYSTALS
- Publication
Physica Status Solidi. A: Applications & Materials Science, 2015, Vol 212, Issue 5, p992
- ISSN
1862-6300
- Publication type
Article
- DOI
10.1002/pssa.201431728