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- Title
INVESTIGATIONS OF InGaN/GaN AND InGaN/InGaN QDS GROWN IN A WIDE PRESSURE MOCVD REACTOR.
- Authors
SIZOV, D. S.; SIZOV, V. S.; LUNDIN, V. V.; ZAVARIN, E. E.; TSATSUL'NIKOV, A. F.; MUSIKHIN, YU. G.; VLASOV, A. S.; LEDENTSOV, N. N.; MINTAIROV, A. M.; SUN, K.; MERZ, J.
- Abstract
InGaN quantum dot (QD) formation in a wide pressure range MOCVD reactor was studied. The existence of QDs and their lateral size (2–5 nm) were demonstrated using transmission electron microscopy and high spatial resolution (~ 100 nm) near-field magneto-photoluminescence spectroscopy. We found that an increase of the reactor pressure from 400 to 1000 mbar leads to an order of magnitude increase in light emission efficiency of the InGaN/GaN QDs accompanied by ~ 100 meV redshift of the emission wavelength. We explored stimulated phase separation (SPS) to control carrier localization and emission wavelength. The SPS was achieved by adding In in the matrix material. This leads to formation of extremely deep InGaN/InGaN QDs having energy localization up to ~ 0.8 eV, which was revealed from selectively excited far-field photoluminescence (PL) spectra. Without SPS the QD activation energy is found to be below 0.2 eV. A nonequilibrium carrier population strongly suppresses the temperature-induced shift of the PL emission in deep InGaN QDs.
- Subjects
QUANTUM dots; GALLIUM nitride; INDIUM compounds; METAL organic chemical vapor deposition; TRANSMISSION electron microscopy; PHOTOLUMINESCENCE
- Publication
International Journal of Nanoscience, 2007, Vol 6, Issue 5, p327
- ISSN
0219-581X
- Publication type
Article
- DOI
10.1142/S0219581X07004882