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- Title
Formation and investigation of cobalt silicide ultrathin layers in Ti/Co/Ti-, TiN/Ti/Co-, and TiN/Co-on-silicon structures.
- Authors
Rudakov, V.; Denisenko, Yu.; Naumov, V.; Simakin, S.
- Abstract
The formation of ultrathin CoSi layers in Ti(8 nm)/Co(10 nm)/Ti(5 nm), TiN(18 nm)/Ti(2 nm)/Co(8 nm), and TiN(18 nm)/Co(8 nm) systems magnetron-sputtered on the Si(100) surface is studied. The systems are subjected to two-step rapid thermal annealing. In between the annealing steps, the 'sacrificial' layer is chemically removed and the second and third systems are additionally covered by a 17-nm-thick amorphous silicon (α-Si) layer. In the course of the fabrication process, the structures are examined using time-of-flight secondary-ion (cation) mass spectrometry, Auger electron spectroscopy, and scanning electron microscopy combined with X-ray energy dispersion microanalysis. It is shown that the above complex of analytical investigation provides efficient physical control of ultrathin silicide layer formation.
- Subjects
COBALT silicide synthesis; THIN film manufacturing; MAGNETRON sputtering; MICROFABRICATION; AUGER electron spectroscopy; TIME-of-flight mass spectrometry; SCANNING electron microscopy
- Publication
Technical Physics, 2012, Vol 57, Issue 2, p279
- ISSN
1063-7842
- Publication type
Article
- DOI
10.1134/S1063784212020235