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- Title
Characterization of Self-Formed Ti-Rich Interface Layers in Cu(Ti)/Low-k Samples.
- Authors
KOHAMA, KAZUYUKI; ITO, KAZUHIRO; TSUKIMOTO, SUSUMU; MORI, KENICHI; MAEKAWA, KAZUYOSHI; MURAKAMI, MASANORI
- Abstract
In our previous studies, thin Ti-rich diffusion barrier layers were found to be formed at the interface between Cu(Ti) films and SiO2/Si substrates after annealing at elevated temperatures. This technique was called self-formation of the diffusion barrier, and is attractive for fabrication of ultralarge-scale integrated (ULSI) interconnects. In the present study, we investigated the applicability of this technique to Cu(Ti) alloy films which were deposited on low dielectric constant (low-k) materials (SiOxCy), SiCO, and SiCN dielectric layers, which are potential dielectric layers for future ULSI Si devices. The microstructures were analyzed by transmission electron microscopy (TEM) and secondary-ion mass spectrometry (SIMS), and correlated with the electrical properties of the Cu(Ti) films. It was concluded that the Ti-rich interface layers were formed in all the Cu(Ti)/dielectric-layer samples. The primary factor to control the composition of the self-formed Ti-rich interface layers was the C concentration in the dielectric layers rather than the enthalpy of formation of the Ti compounds (TiC, TiSi, and TiN). Crystalline TiC was formed on the dielectric layers with a C concentration higher than 17 at.%.
- Subjects
METALLIC films; COPPER alloys; TITANIUM alloys; MOLECULAR self-assembly; MICROSTRUCTURE; TRANSMISSION electron microscopy; DIELECTRICS
- Publication
Journal of Electronic Materials, 2008, Vol 37, Issue 8, p1148
- ISSN
0361-5235
- Publication type
Article
- DOI
10.1007/s11664-008-0482-8