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- Title
Selective Dry Etching of (Sc<sub>2</sub>O<sub>3</sub>)<sub>x</sub>(Ga<sub>2</sub>O<sub>3</sub>)<sub>1-x</sub> Gate Dielectrics and Surface Passivation Films on GaN.
- Authors
Hlad, M.; Voss, L.; Gila, B. P.; Abernathy, C. R.; Pearton, S. J.; Ren, F.
- Abstract
(Sc2O3)x(Ga2O3)1-x films grown by molecular beam epitaxy show promise for use as surface passivation layers and gate dielectrics on GaN-based high electron mobility transistors. Completely selective, low-damage, dry etching of (Sc2O3)x(Ga2O3)1-x films with respect to GaN can be achieved with low-power inductively coupled plasmas of CH4/H2/Ar with etch rates in the range 200-300 Å /min. The incident ion energies are of order 100 eV, and no roughening of the underlying GaN was observed under these conditions. Similar etch rates were obtained with Cl2/Ar discharges under the same conditions, but GaN showed rates almost an order of magnitude higher.
- Subjects
MOLECULAR beam epitaxy; DIELECTRICS; ELECTRON mobility; PLASMA etching; EPITAXY
- Publication
Journal of Electronic Materials, 2006, Vol 35, Issue 4, p680
- ISSN
0361-5235
- Publication type
Article
- DOI
10.1007/s11664-006-0120-2