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- Title
Structural and electrical properties of quantum wells with nanoscale InAs inserts in InAlAs/InGaAs heterostructures on InP substrates.
- Authors
Vasil'ev, A.; Vasil'evskii, I.; Galiev, G.; Imamov, R.; Klimov, E.; Kovalchuk, M.; Ponomarev, D.; Roddatis, V.; Subbotin, I.
- Abstract
complex study of the effect ofintroduction of nanoscale InAs inserts of different thicknesses into an InGaAs quantum well on the electrical properties and structural features of InAlAs/InGaAs/InAlAs nanoheterostructures with bilateral δ-Si doping grown on InP substrates has been performed. The layers of nanoheterostructures with a weak lattice mismatch are found to be equally (cube-on-cube) oriented. The introduction of a nanoscale InAs insert leads to an increase in mobility. At an insert thickness of about 1.8 nm, the effect of increasing mobility is saturated due to structural deterioration. The segregation of the second (apparently, wurtzite) phase is revealed; this process, as well as the formation of other defects in the nanoheterostructure layers, is due to local strains caused by variations of the indium content in the layers.
- Subjects
MOLECULAR structure; ELECTRIC properties of crystals; QUANTUM wells; NANOSTRUCTURED materials; ARSENIDES; HETEROSTRUCTURES; INDIUM phosphide; THICKNESS measurement
- Publication
Crystallography Reports, 2011, Vol 56, Issue 2, p298
- ISSN
1063-7745
- Publication type
Article
- DOI
10.1134/S1063774511020180