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- Title
Direct Observation of Conductive Polymer Induced Inversion Layer in n‐Si and Correlation to Solar Cell Performance.
- Authors
Wang, Rongbin; Wang, Yusheng; Wu, Chen; Zhai, Tianshu; Yang, Jiacheng; Sun, Baoquan; Duhm, Steffen; Koch, Norbert
- Abstract
Heterojunctions formed by ultrathin conductive polymer [poly(3,4‐ethylenedioxythiophene): poly(styrenesulfonate)—PEDOT:PSS] films and n‐type crystalline silicon are investigated by photoelectron spectroscopy. Large shifts of Si 2p core levels upon PEDOT:PSS deposition provide evidence that a dopant‐free p–n junction, i.e., an inversion layer, is formed within Si. Among the investigated PEDOT:PSS formulations, the largest induced band bending within Si (0.71 eV) is found for PH1000 (high PEDOT content) combined with a wetting agent and the solvent additive dimethyl sulfoxide (DMSO). Without DMSO, the induced band bending is reduced, as is also the case with a PEDOT:PSS formulation with higher PSS content. The interfacial energy level alignment correlates well with the characteristics of PEDOT:PSS/n‐Si solar cells, where high polymer conductivity and sufficient Si‐passivation are also required to achieve high power conversion efficiency.
- Subjects
SOLAR cells; PHOTOELECTRON spectroscopy; WETTING agents
- Publication
Advanced Functional Materials, 2020, Vol 30, Issue 4, pN.PAG
- ISSN
1616-301X
- Publication type
Article
- DOI
10.1002/adfm.201903440