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- Title
Memory Devices: Low-Power Nonvolatile Charge Storage Memory Based on MoS<sub>2</sub> and an Ultrathin Polymer Tunneling Dielectric (Adv. Funct. Mater. 43/2017).
- Authors
Woo, Myung Hun; Jang, Byung Chul; Choi, Junhwan; Lee, Khang June; Shin, Gwang Hyuk; Seong, Hyejeong; Im, Sung Gap; Choi, Sung‐Yool
- Abstract
In article number 1703545, Sung‐Yool Choi and co‐workers describe MoS2‐based low‐power nonvolatile charge storage memory devices with a poly(1,3,5‐trimethyl‐1,3,5‐trivinyl cyclotrisiloxane) (pV3D3) tunneling dielectric layer formed via a solvent‐free initiated chemical vapor deposition (iCVD) process. The developed memory devices show excellent retention times (above 10 years), and a stable cycling endurance of more than 103 cycles at low operating voltage.
- Subjects
THIN films; DIELECTRIC devices; ELECTRIC properties of polymers
- Publication
Advanced Functional Materials, 2017, Vol 27, Issue 43, pn/a
- ISSN
1616-301X
- Publication type
Article
- DOI
10.1002/adfm.201703545