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- Title
异质诱导生长的酞菁铜薄膜晶体管的研究.
- Authors
李亨利; 都 昊; 王丽娟; 张玉婷; 李一平; 邹凤君; 宋贵才; 宋晓峰
- Abstract
The growth characteristics of phthalocyanine thin films were investigated by the method of heterogeneous induction due to planar electron conjugated bond structure of phthalocyanine thin film. Copper phthalocyanine organic thin film transistors were fabricated, which consist of high-doped silicon as the gate, the oxide silicon as the insulating layer, and the growth of α-tetrathiophene or para-hexaphenyl thin film as heterogeneous layer. The growth characteristics of the films were studied by atomic force microscopy. And the effect of two kinds of inducting layers on the properties of thin film transistors was contrastively investigated. The experimental results showed that copper phthalocyanine thin films grown on α-tetrathiophene were lamella morphology, and the copper phthalocyanine thin films grown on para-hexaphenyl were needle morphology, and they were different from rod shape of monolayer copper phthalocyanine. At the same time, the electric properties of two transistors were improved by the growth of copper phthalocyanine on α-tetrathiophene or para-hexaphenyl films, which were one or two orders of magnitude higher than the monolayer copper phthalocyanine. It was confirmed that the α-tetrathiophene and para-hexaphenyl films had induction effect on copper phthalocyanine thin films, and organic thin film transistor with high performance could be obtained.
- Publication
Chinese Journal of Liquid Crystal & Displays, 2016, Vol 31, Issue 2, p157
- ISSN
1007-2780
- Publication type
Article
- DOI
10.3788/YJYXS20163102.0157