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- Title
Investigation of the Structural Perfection of Thin-Film InAlGaPAs/GaAs Heterostructures.
- Authors
Alfimova, D. L.; Lunin, L. S.; Lunina, M. L.; Pashchenko, A. S.; Chebotarev, S. N.; Kazakova, A. E.; Arustamyan, D. A.
- Abstract
The influence of growth conditions on the structural perfection of thin-film InAlGaPAs/GaAs heterostructures is discussed. The main determined growth parameters are the growth temperature and its gradient, liquid-zone thickness, matching between lattice parameters and the thermal expansion coefficients of the layer and substrate, and dislocation density in the substrate.
- Publication
Journal of Surface Investigation: X-Ray, Synchrotron & Neutron Techniques, 2018, Vol 12, Issue 3, p466
- ISSN
1027-4510
- Publication type
Article
- DOI
10.1134/S1027451018030047