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Saturation Velocity Measurement of Al0.7Ga0.3N-Channel High Electron Mobility Transistors.
Published in:
Journal of Electronic Materials, 2019, v. 48, n. 9, p. 5581, doi. 10.1007/s11664-019-07421-1
By:
- Klein, Brianna A.;
- Baca, Albert G.;
- Lepkowski, Stephan M.;
- Nordquist, Christopher D.;
- Wendt, Joel R.;
- Allerman, Andrew A.;
- Armstrong, Andrew M.;
- Douglas, Erica A.;
- Abate, Vincent M.;
- Kaplar, Robert J.
Publication type:
Article
Correlative Electron Energy-Loss Spectroscopy Bandgap Mapping and DFT Modeling in AlGaN Diodes.
Published in:
2022
By:
- Deitz, Julia I.;
- Sugar, Joshua D.;
- Kiefer, Boris;
- Baldonado, Nicholas S.;
- Allerman, Andrew A.;
- Crawford, Mary H.
Publication type:
Abstract
Defect analysis of star defects in GaN thin films grown on HVPE GaN substrates.
Published in:
2021
By:
- Ruggles, Tim;
- Deitz, Julia;
- Allerman, Andrew;
- Carter, C. Barry;
- Michael, Joseph
Publication type:
Abstract
Defect analysis of star defects in GaN thin films grown on HVPE GaN substrates.
Published in:
2021
By:
- Ruggles, Tim;
- Deitz, Julia;
- Allerman, Andrew;
- Carter, C. Barry;
- Michael, Joseph
Publication type:
Abstract
Identification of Star Defects in Gallium Nitride with HREBSD and ECCI.
Published in:
Microscopy & Microanalysis, 2021, v. 27, n. 2, p. 257, doi. 10.1017/S143192762100009X
By:
- Ruggles, Timothy J.;
- Deitz, Julia I.;
- Allerman, Andrew A.;
- Carter, C. Barry;
- Michael, Joseph R.
Publication type:
Article
Measuring the minority carrier diffusion length in n-GaN using bulk STEM EBIC.
Published in:
Microscopy & Microanalysis, 2019, p. 1842, doi. 10.1017/S1431927618009698
By:
- Warecki, Zoey;
- Oleshko, Vladimir;
- Celio, Kimberlee;
- Armstrong, Andrew;
- Allerman, Andrew;
- Talin, A. Alec;
- Cumings, John
Publication type:
Article
Measuring the minority carrier diffusion length in n-GaN using bulk STEM EBIC.
Published in:
2018
By:
- Warecki, Zoey;
- Oleshko, Vladimir;
- Celio, Kimberlee;
- Armstrong, Andrew;
- Allerman, Andrew;
- Talin, A. Alec;
- Cumings, John
Publication type:
Abstract
Regrown Vertical GaN p–n Diodes with Low Reverse Leakage Current.
Published in:
Journal of Electronic Materials, 2019, v. 48, n. 5, p. 3311, doi. 10.1007/s11664-019-07098-6
By:
- Pickrell, G. W.;
- Armstrong, A. M.;
- Allerman, A. A.;
- Crawford, M. H.;
- Cross, K. C.;
- Glaser, C. E.;
- Abate, V. M.
Publication type:
Article
Reduction in the Number of Mg Acceptors with Al Concentration in AlGaN.
Published in:
Journal of Electronic Materials, 2015, v. 44, n. 11, p. 4139, doi. 10.1007/s11664-014-3475-9
By:
- Sunay, U.;
- Zvanut, M.;
- Allerman, A.
Publication type:
Article
Smooth and Vertical Facet Formation for AlGaN-Based Deep-UV Laser Diodes.
Published in:
Journal of Electronic Materials, 2009, v. 38, n. 4, p. 533, doi. 10.1007/s11664-009-0670-1
By:
- Miller, M. A.;
- Crawford, M. H.;
- Allerman, A. A.;
- Cross, K. C.;
- Banas, M. A.;
- Shul, R. J.;
- Stevens, J.;
- Bogart, K. H. A.
Publication type:
Article
EXAMINING EDGE-TERMINATION PERFORMANCE AND FAILURE IN VERTICAL GaN AND AIGaN POWER DIODES USING SCANNING-BEAM TECHNIQUES.
Published in:
Electronic Device Failure Analysis, 2017, v. 19, n. 3, p. 12, doi. 10.31399/asm.edfa.2017-3.p012
By:
- Kaplar, R. J.;
- Léonard, F.;
- Collins, K. C.;
- Armstrong, A. M.;
- Dickerson, J. R.;
- King, M. P.;
- Allerman, A. A.;
- Crawford, M. H.;
- Talin, A. A.
Publication type:
Article
Strong coupling in the sub-wavelength limit using metamaterial nanocavities.
Published in:
Nature Communications, 2013, v. 4, n. 11, p. 2882, doi. 10.1038/ncomms3882
By:
- Benz, A.;
- Campione, S.;
- Liu, S.;
- Montaño, I.;
- Klem, J.F.;
- Allerman, A;
- Wendt, J.R.;
- Sinclair, M.B.;
- Capolino, F.;
- Brener, I.
Publication type:
Article
Single-junction InGaP/GaAs Solar Cells Grown on Si Substrates with SiGe Buffer Layers.
Published in:
Progress in Photovoltaics, 2002, v. 10, n. 6, p. 417, doi. 10.1002/pip.448
By:
- Ringel, S.A.;
- Carlin, J.A.;
- Andre, C.L.;
- Hudait, M.K.;
- Gonzalez, M.;
- Wilt, D.M.;
- Clark, E.B.;
- Jenkins, P.;
- Scheiman, D.;
- Allerman, A.;
- Fitzgerald, E.A.;
- Leitz, C.W.
Publication type:
Article
Interfacial Impurities and Their Electronic Signatures in High‐Voltage Regrown Nonpolar m‐Plane GaN Vertical p–n Diodes.
Published in:
Physica Status Solidi. A: Applications & Materials Science, 2020, v. 217, n. 7, p. 1, doi. 10.1002/pssa.201900757
By:
- Aragon, Andrew;
- Monavarian, Morteza;
- Stricklin, Isaac;
- Pickrell, Greg;
- Crawford, Mary;
- Allerman, Andrew;
- Armstrong, Andrew M.;
- Feezell, Daniel
Publication type:
Article
Ohmic contacts to Al-rich AlGaN heterostructures.
Published in:
Physica Status Solidi. A: Applications & Materials Science, 2017, v. 214, n. 8, p. n/a, doi. 10.1002/pssa.201600842
By:
- Douglas, E. A.;
- Reza, S.;
- Sanchez, C.;
- Koleske, D.;
- Allerman, A.;
- Klein, B.;
- Armstrong, A. M.;
- Kaplar, R. J.;
- Baca, A. G.
Publication type:
Article
Defect-enabled electrical current leakage in ultraviolet light-emitting diodes (Phys. Status Solidi A 4∕2015).
Published in:
2015
By:
- Moseley, Michael W.;
- Allerman, Andrew A.;
- Crawford, Mary H.;
- Wierer, Jonathan J.;
- Smith, Michael L.;
- Biedermann, Laura B.
Publication type:
Other
Defect-enabled electrical current leakage in ultraviolet light-emitting diodes.
Published in:
Physica Status Solidi. A: Applications & Materials Science, 2015, v. 212, n. 4, p. 723, doi. 10.1002/pssa.201400182
By:
- Moseley, Michael W.;
- Allerman, Andrew A.;
- Crawford, Mary H.;
- Wierer, Jonathan J.;
- Smith, Michael L.;
- Biedermann, Laura B.
Publication type:
Article
High voltage GaN p-n diodes formed by selective area regrowth.
Published in:
Electronics Letters (Wiley-Blackwell), 2020, v. 56, n. 4, p. 207, doi. 10.1049/el.2019.3587
By:
- Armstrong, A. M.;
- Pickrell, G. P.;
- Allerman, A. A.;
- Crawford, M. H.;
- Glaser, C. E.;
- Smith, T.;
- Abate, V. M.
Publication type:
Article
High voltage GaN p‐n diodes formed by selective area regrowth.
Published in:
Electronics Letters (Wiley-Blackwell), 2020, v. 56, n. 3, p. 207, doi. 10.1049/el.2019.3587
By:
- Armstrong, A.M.;
- Pickrell, G.P.;
- Allerman, A.A.;
- Crawford, M.H.;
- Glaser, C.E.;
- Smith, T.;
- Abate, V.M.
Publication type:
Article
Al0.3Ga0.7N PN diode with breakdown voltage >1600 V.
Published in:
Electronics Letters (Wiley-Blackwell), 2016, v. 52, n. 15, p. 1319, doi. 10.1049/el.2016.1280
By:
- Allerman, A. A.;
- Armstrong, A. M.;
- Fischer, A. J.;
- Dickerson, J. R.;
- Crawford, M. H.;
- King, M. P.;
- Moseley, M. W.;
- Wierer, J. J.;
- Kaplar, R. J.
Publication type:
Article
Al0.3Ga0.7N PN diode with breakdown voltage >1600 V.
Published in:
Electronics Letters (Wiley-Blackwell), 2016, v. 52, n. 14, p. 1319, doi. 10.1049/el.2016.1280
By:
- Allerman, A.A.;
- Armstrong, A.M.;
- Fischer, A.J.;
- Dickerson, J.R.;
- Crawford, M.H.;
- King, M.P.;
- Moseley, M.W.;
- Wierer, J.J.;
- Kaplar, R.J.
Publication type:
Article
High voltage and high current density vertical GaN power diodes.
Published in:
Electronics Letters (Wiley-Blackwell), 2016, v. 52, n. 13, p. 1170, doi. 10.1049/el.2016.1156
By:
- Armstrong, A. M.;
- Allerman, A. A.;
- Fischer, A. J.;
- King, M. P.;
- van Heukelom, M. S.;
- Moseley, M. W.;
- Kaplar, R. J.;
- Wierer, J. J.;
- Crawford, M. H.;
- Dickerson, J. R.
Publication type:
Article
High voltage and high current density vertical GaN power diodes.
Published in:
Electronics Letters (Wiley-Blackwell), 2016, v. 52, n. 13, p. 1170, doi. 10.1049/el.2016.1156
By:
- Armstrong, A.M.;
- Allerman, A.A.;
- Fischer, A.J.;
- King, M.P.;
- Heukelom, M.S.;
- Moseley, M.W.;
- Kaplar, R.J.;
- Wierer, J.J.;
- Crawford, M.H.;
- Dickerson, J.R.
Publication type:
Article
850-nm Vertical-Cavity Surface-Emitting Lasers on Si Substrates.
Published in:
International Journal of High Speed Electronics & Systems, 2000, v. 10, n. 1, p. 319, doi. 10.1016/S0129-1564(00)00034-9
By:
- Zhou, Y.;
- Xiong, Y.;
- Lo, Y.-H.;
- Ji, C.;
- Zhu, Z. H.;
- Bashar, S. A.;
- Allerman, A. A.;
- Hargett, T.;
- Sieg, R.;
- Choquette, K. D.
Publication type:
Article

Found: 24

Saturation Velocity Measurement of Al<sub>0.7</sub>Ga<sub>0.3</sub>N-Channel High Electron Mobility Transistors.

Correlative Electron Energy-Loss Spectroscopy Bandgap Mapping and DFT Modeling in AlGaN Diodes.

Defect analysis of star defects in GaN thin films grown on HVPE GaN substrates.

Defect analysis of star defects in GaN thin films grown on HVPE GaN substrates.

Identification of Star Defects in Gallium Nitride with HREBSD and ECCI.

Measuring the minority carrier diffusion length in n-GaN using bulk STEM EBIC.

Measuring the minority carrier diffusion length in n-GaN using bulk STEM EBIC.

Regrown Vertical GaN p–n Diodes with Low Reverse Leakage Current.

Reduction in the Number of Mg Acceptors with Al Concentration in AlGaN.

Smooth and Vertical Facet Formation for AlGaN-Based Deep-UV Laser Diodes.

EXAMINING EDGE-TERMINATION PERFORMANCE AND FAILURE IN VERTICAL GaN AND AIGaN POWER DIODES USING SCANNING-BEAM TECHNIQUES.

Strong coupling in the sub-wavelength limit using metamaterial nanocavities.

Single-junction InGaP/GaAs Solar Cells Grown on Si Substrates with SiGe Buffer Layers.

Interfacial Impurities and Their Electronic Signatures in High‐Voltage Regrown Nonpolar m‐Plane GaN Vertical p–n Diodes.

Ohmic contacts to Al-rich AlGaN heterostructures.

Defect-enabled electrical current leakage in ultraviolet light-emitting diodes (Phys. Status Solidi A 4∕2015).

Defect-enabled electrical current leakage in ultraviolet light-emitting diodes.

High voltage GaN p-n diodes formed by selective area regrowth.

High voltage GaN p‐n diodes formed by selective area regrowth.

Al<sub>0.3</sub>Ga<sub>0.7</sub>N PN diode with breakdown voltage >1600 V.

Al<sub>0</sub><sub>.3</sub>Ga<sub>0.7</sub>N PN diode with breakdown voltage >1600 V.

High voltage and high current density vertical GaN power diodes.

High voltage and high current density vertical GaN power diodes.

850-nm Vertical-Cavity Surface-Emitting Lasers on Si Substrates.