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- Title
Low-temperature growth of SnO<sub>2</sub> film prepared by XeCl excimer laser MOD process.
- Authors
Tsuchiya, T.; Takeda, M.; Yamaguchi, I.; Manabe, T.; Kumagai, T.; Mizuta, S.
- Abstract
A SnO2 film has been prepared by an excimer laser metal organic deposition (ELMOD) process using an XeCl laser. The effects of the laser fluence, shot number, and the pretreatment temperature of the Sn acetylacetonate (Sn-acac) on the crystallization of the SnO2 film were investigated by X-ray diffraction and infrared spectroscopy. When the MO spin-coated film preheated at room temperature on a Si substrate was irradiated by the laser at a fluence of 100 mJ/cm2 and at a repetition rate of 10 Hz for 5 min, a crystallized SnO2 film was successfully obtained without heat treatment. At a fluence of 260 mJ/cm2, the highest crystalline film was formed. On the other hand, when the amorphous SnO2 film was irradiated by the laser at 260 mJ/cm2, the crystallinity of the SnO2 film was improved. SnO2 films were also prepared by conventional thermal MOD in a temperature range from 300 to 900 °C. The crystallinity of the SnO2 films prepared by the ELMOD process at room temperature was higher than that of the films prepared by heating at 900 °C for 60 min.
- Subjects
HEATING equipment; HEAT treatment of metals; OPTICS; LASERS; FILMSTRIPS; LOW temperatures; EXCIMER lasers
- Publication
Applied Physics A: Materials Science & Processing, 2004, Vol 79, Issue 4-6, p1541
- ISSN
0947-8396
- Publication type
Article
- DOI
10.1007/s00339-004-2843-3