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Low-temperature variation of magnetic order in a nonmagnetic n-Ge:As semiconductor in the vicinity of the metal-insulator phase transition.
Published in:
Journal of Experimental & Theoretical Physics, 2013, v. 116, n. 5, p. 796, doi. 10.1134/S1063776113050142
By:
- Veinger, A.;
- Zabrodskii, A.;
- Makarova, T.;
- Tisnek, T.;
- Goloshchapov, S.;
- Semenikhin, P.
Publication type:
Article
Determination of the magnetic susceptibility of “poor” conductors by electron paramagnetic resonance.
Published in:
Technical Physics, 2013, v. 58, n. 12, p. 1806, doi. 10.1134/S1063784213120256
By:
- Veinger, A. I.;
- Zabrodskii, A. G.;
- Tisnek, T. V.;
- Goloshchapov, S. I.;
- Semenikhin, P. V.
Publication type:
Article
Edge state magnetism in zigzag-interfaced graphene via spin susceptibility measurements.
Published in:
Scientific Reports, 2015, p. 13382, doi. 10.1038/srep13382
By:
- Makarova, T. L.;
- Shelankov, A. L.;
- Zyrianova, A. A.;
- Veinger, A. I.;
- Tisnek, T. V.;
- Lähderanta, E.;
- Shames, A. I.;
- Okotrub, A. V.;
- Bulusheva, L. G.;
- Chekhova, G. N.;
- Pinakov, D. V.;
- Asanov, I. P.;
- Šljivančanin, Ž.
Publication type:
Article
Magnetic-field-dependent microwave absorption in HgSe in weak magnetic fields.
Published in:
Semiconductors, 2017, v. 51, n. 2, p. 163, doi. 10.1134/S1063782617020233
By:
- Veinger, A.;
- Tisnek, T.;
- Kochman, I.;
- Okulov, V.
Publication type:
Article
Detection of impurity diamagnetic susceptibility and its behavior in n-Ge:As in the region of the insulator-metal phase transition.
Published in:
Semiconductors, 2015, v. 49, n. 10, p. 1294, doi. 10.1134/S1063782615100267
By:
- Veinger, A.;
- Zabrodskii, A.;
- Makarova, T.;
- Tisnek, T.;
- Goloshchapov, S.;
- Semenikhin, P.
Publication type:
Article
Specific features of the anisotropy of low-temperature microwave magnetoresistivity of lightly doped p-Ge due to the presence of light and heavy holes.
Published in:
Semiconductors, 2011, v. 45, n. 10, p. 1264, doi. 10.1134/S106378261110023X
By:
- Veinger, A.;
- Zabrodskii, A.;
- Tisnek, T.;
- Goloshchapov, S.
Publication type:
Article
Spin-peierls transition in the random impurity sublattice of a semiconductor.
Published in:
Semiconductors, 2010, v. 44, n. 6, p. 705, doi. 10.1134/S1063782610060035
By:
- Veinger, A. I.;
- Zabrodskii, A. G.;
- Tisnek, T. V.;
- Goloshchapov, S. I.
Publication type:
Article
Electron spin resonance of interacting spins in n-Ge: II. Change in the width and shape of lines.
Published in:
Semiconductors, 2008, v. 42, n. 11, p. 1274, doi. 10.1134/S1063782608110055
By:
- Veinger, A. I.;
- Zabrodskii, A. G.;
- Tisnek, T. V.;
- Goloshchapov, S. I.
Publication type:
Article
Electron spin resonance of interacting spins in n-Ge. 1. The spectrum and g factor.
Published in:
Semiconductors, 2007, v. 41, n. 7, p. 790, doi. 10.1134/S1063782607070044
By:
- Veĭnger, A. I.;
- Zabrodskiĭ, A. G.;
- Tisnek, T. V.;
- Goloshchapov, S. I.
Publication type:
Article
Manifestation of clustering of Ge atoms in the spectra of electron spin resonance of Si1 − x Ge x alloys (0 < x < 0.057).
Published in:
Semiconductors, 2007, v. 41, n. 6, p. 666, doi. 10.1134/S1063782607060103
By:
- Veinger, A.;
- Zabrodskiĭ, A.;
- Tisnek, T.;
- Goloshchapov, S.;
- Abrosimov, N.
Publication type:
Article
Low-Temperature Microwave Magnetoresistance of Lightly Doped p-Ge and p-Ge1 – xSix.
Published in:
Semiconductors, 2005, v. 39, n. 10, p. 1117, doi. 10.1134/1.2085256
By:
- Veınger, A. I.;
- Zabrodskiı, A. G.;
- Tisnek, T. V.
Publication type:
Article
Special Features of Electron Spin Resonance in 4H-SiC in the Vicinity of the Insulator–Metal Phase Transition: I. Effects of Spin Interaction.
Published in:
Semiconductors, 2003, v. 37, n. 7, p. 846, doi. 10.1134/1.1592863
By:
- Veınger, A. I.;
- Zabrodskiı, A. G.;
- Tisnek, T. V.;
- Mokhov, E. N.
Publication type:
Article
Microwave Magnetoresistance of Compensated p-Ge:Ga in the Region of the Insulator–Metal Phase Transition.
Published in:
Semiconductors, 2002, v. 36, n. 7, p. 772, doi. 10.1134/1.1493747
By:
- Veınger, A. I.;
- Zabrodskiı, A. G.;
- Tisnek, T. V.
Publication type:
Article
The Magnetoresistance of Compensated Ge:As at Microwave Frequencies in the Vicinity of the Metal–Insulator Phase Transition.
Published in:
Semiconductors, 2000, v. 34, n. 7, p. 746, doi. 10.1134/1.1188066
By:
- Veınger, A. I.;
- Zabrodskiı, A. G.;
- Tisnek, T. V.
Publication type:
Article
Electron Spin Resonance in the Vicinity of Metal–Insulator Transition in Compensated n-Ge:As.
Published in:
Semiconductors, 2000, v. 34, n. 1, p. 45, doi. 10.1134/1.1187959
By:
- Veınger, A. I.;
- Zabrodskiı, A. G.;
- Tisnek, T. V.
Publication type:
Article
Distinctive features of the magnetoresistance of degenerately doped n-lnAs and their influence on magnetic.field-dependent microwave absorption
Published in:
Semiconductors, 1998, v. 32, n. 5, p. 497, doi. 10.1134/1.1187427
By:
- Veinger, A. I.;
- Zabrodskii, A. G.;
- Tisnek, T. V.;
- Biskupski, G.
Publication type:
Article
Lattice distortion (Peierls Transition) caused by spin interaction in the chaotic impurity system of a semiconductor.
Published in:
Annalen der Physik, 2009, v. 521, n. 12, p. 923, doi. 10.1002/andp.20095211223
By:
- Zabrodskii, A.;
- Veinger, A.;
- Tisnek, T.;
- Goloshchapov, S.
Publication type:
Article
Angular and temperature‐related specific features of averaging of hole effective masses in p‐Ge at low temperatures.
Published in:
Annalen der Physik, 2009, v. 521, n. 12, p. 918, doi. 10.1002/andp.20095211222
By:
- Tisnek, T.;
- Veinger, A.;
- Zabrodskii, A.;
- Goloshchapov, S.
Publication type:
Article

Found: 18

Low-temperature variation of magnetic order in a nonmagnetic n-Ge:As semiconductor in the vicinity of the metal-insulator phase transition.

Determination of the magnetic susceptibility of “poor” conductors by electron paramagnetic resonance.

Edge state magnetism in zigzag-interfaced graphene via spin susceptibility measurements.

Magnetic-field-dependent microwave absorption in HgSe in weak magnetic fields.

Detection of impurity diamagnetic susceptibility and its behavior in n-Ge:As in the region of the insulator-metal phase transition.

Specific features of the anisotropy of low-temperature microwave magnetoresistivity of lightly doped p-Ge due to the presence of light and heavy holes.

Spin-peierls transition in the random impurity sublattice of a semiconductor.

Electron spin resonance of interacting spins in n-Ge: II. Change in the width and shape of lines.

Electron spin resonance of interacting spins in n-Ge. 1. The spectrum and g factor.

Manifestation of clustering of Ge atoms in the spectra of electron spin resonance of Si<sub>1 − x </sub>Ge<sub> x </sub> alloys (0 < x < 0.057).

Low-Temperature Microwave Magnetoresistance of Lightly Doped p-Ge and p-Ge<sub>1 – </sub><sub>x</sub>Si<sub>x</sub>.

Special Features of Electron Spin Resonance in 4H-SiC in the Vicinity of the Insulator–Metal Phase Transition: I. Effects of Spin Interaction.

Microwave Magnetoresistance of Compensated p-Ge:Ga in the Region of the Insulator–Metal Phase Transition.

The Magnetoresistance of Compensated Ge:As at Microwave Frequencies in the Vicinity of the Metal–Insulator Phase Transition.

Electron Spin Resonance in the Vicinity of Metal–Insulator Transition in Compensated n-Ge:As.

Distinctive features of the magnetoresistance of degenerately doped n-lnAs and their influence on magnetic.field-dependent microwave absorption

Lattice distortion (Peierls Transition) caused by spin interaction in the chaotic impurity system of a semiconductor.

Angular and temperature‐related specific features of averaging of hole effective masses in p‐Ge at low temperatures.