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Chemical kinetics and thermodynamics of the AlN crystalline phase formation on sapphire substrate in ammonia MBE.
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- Journal of Thermal Analysis & Calorimetry, 2018, v. 133, n. 2, p. 1099, doi. 10.1007/s10973-018-7116-z
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- Article
Mechanisms of exciton photoluminescence quenching in the electric field of a standing surface acoustic wave.
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- International Journal of Modern Physics B: Condensed Matter Physics; Statistical Physics; Applied Physics, 2019, v. 33, n. 6, p. N.PAG, doi. 10.1142/S0217979219500322
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- Article
Determination of Electron Temperature in DA-pHEMT Heterostructures by Shubnikov - de Haas Oscillation Method.
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- Russian Physics Journal, 2018, v. 61, n. 7, p. 1202, doi. 10.1007/s11182-018-1518-z
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- Article
Sub-THz nonresonant detection in AlGaN/GaN heterojunction FETs.
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- Semiconductor Physics, Quantum Electronics & Optoelectronics, 2015, v. 18, n. 1, p. 40
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- Article
Use of high-purity Al[sub x]Ga[sub 1-x]As layers in epitaxial structures for high-power microwave field-effect transistors.
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- Technical Physics Letters, 1999, v. 25, n. 8, p. 595, doi. 10.1134/1.1262567
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- Article
GaAs/AlGaAs- and InGaAs/AlGaAs-Heterostructures for High-Power Semiconductor Infrared Emitters.
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- Technical Physics, 2024, v. 69, n. 2, p. 249, doi. 10.1134/S106378422401016X
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- Article
High-Power Microwave Photodiodes Based on MBE-Grown InAlAs/InGaAs Heterostructures.
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- Technical Physics, 2021, v. 66, n. 9, p. 1072, doi. 10.1134/S1063784221070185
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- Article
Liquid phase epitaxial growth of undoped gallium arsenide from bismuth and gallium melts.
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- Crystal Research & Technology, 1989, v. 24, n. 2, p. 235, doi. 10.1002/crat.2170240221
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- Article
A suite of experimental conditions for photoluminescence monitoring of a heterojunction bipolar transistor structure.
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- Technical Physics, 1997, v. 42, n. 12, p. 1395, doi. 10.1134/1.1258884
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- Article
Mechanisms of Optical Gain in Heavily Doped Al<sub>x</sub>Ga<sub>1 –</sub><sub>x</sub>N:Si Structures (x = 0.56–1).
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- Semiconductors, 2024, v. 58, n. 5, p. 386, doi. 10.1134/S1063782624050026
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- Article
The Electrochemical Profiling of n<sup>+</sup>/n GaAs Structures for Field-Effect Transistors.
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- Semiconductors, 2024, v. 58, n. 3, p. 254, doi. 10.1134/S1063782624030126
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- Article
Transformation of N-Polar Inversion Domains from AlN Buffer Layers during the Growth of AlGaN Layers.
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- Semiconductors, 2022, v. 56, n. 6, p. 352, doi. 10.1134/S1063782622070077
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- Article
GaN Quantum-Dot Formation by a Temperature Increase in an Ammonia Flow.
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- Semiconductors, 2022, v. 56, n. 6, p. 340, doi. 10.1134/S1063782622070053
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- Article
Substitution of Phosphorus at the InP(001) Surface Upon Annealing in an Arsenic Flux.
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- Semiconductors, 2021, v. 55, n. 11, p. 823, doi. 10.1134/S1063782621100080
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- Article
On the Processes of the Self-Assembly of CdS Nanocrystal Arrays Formed by the Langmuir–Blodgett Technique.
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- Semiconductors, 2019, v. 53, n. 11, p. 1540, doi. 10.1134/S1063782619110198
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- Article
Formation of a Graphene-Like SiN Layer on the Surface Si(111).
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- Semiconductors, 2018, v. 52, n. 12, p. 1511, doi. 10.1134/S1063782618120151
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- Article
Effect of the Sapphire-Nitridation Level and Nucleation-Layer Enrichment with Aluminum on the Structural Properties of AlN Layers.
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- Semiconductors, 2018, v. 52, n. 6, p. 789, doi. 10.1134/S1063782618060143
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- Article
Recombination of charge carriers in the GaAs-based p- i- n diode.
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- Semiconductors, 2010, v. 44, n. 10, p. 1362, doi. 10.1134/S1063782610100209
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- Article
The form of the profile of heterointerfaces in (311)Ga GaAs/AlAs structures.
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- Semiconductors, 2010, v. 44, n. 3, p. 341, doi. 10.1134/S1063782610030127
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- Article
Nonradiative recombination in GaN quantum dots formed in the AlN matrix.
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- Semiconductors, 2009, v. 43, n. 6, p. 768, doi. 10.1134/S1063782609060165
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- Article
Linearly polarized photoluminescence from an ensemble of wurtzite GaN/AlN quantum dots.
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- JETP Letters, 2010, v. 91, n. 9, p. 452, doi. 10.1134/S0021364010090043
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- Article
Changes in optical properties of CdS nanoclusters in langmuir-blodgett films on passivation in ammonia.
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- Semiconductors, 2008, v. 42, n. 6, p. 702, doi. 10.1134/S1063782608060110
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- Article
Mechanism of the effect of the electric field of a surface acoustic wave on the low-temperature photoluminescence kinetics in type-II GaAs/AlAs superlattices.
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- Semiconductors, 2007, v. 41, n. 2, p. 205, doi. 10.1134/S1063782607020170
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- Article
Exciton-polariton transition induced by elastic exciton-exciton collisions in ultrahigh quality AIGaAs alloys.
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- Semiconductors, 2006, v. 40, n. 5, p. 527, doi. 10.1134/S1063782606050046
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- Article
Photoluminescence of Silicon Nanocrystals under the Effect of an Electric Field.
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- Semiconductors, 2005, v. 39, n. 11, p. 1319, doi. 10.1134/1.2128458
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- Article
Ge/Si Waveguide Photodiodes with Built-In Layers of Ge Quantum Dots for Fiber-Optic Communication Lines.
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- Semiconductors, 2004, v. 38, n. 10, p. 1225, doi. 10.1134/1.1808834
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- Article
Effect of Uniform Compression on Photoluminescence Spectra of GaAs Layers Heavily Doped with Beryllium.
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- Semiconductors, 2004, v. 38, n. 3, p. 277, doi. 10.1134/1.1682326
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- Article
Photoluminescence from Cadmium Sulfide Nanoclusters Formed in the Matrix of a Langmuir–Blodgett Film.
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- Semiconductors, 2003, v. 37, n. 11, p. 1321, doi. 10.1134/1.1626217
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- Article
Properties of Ge Nanocrystals Formed by Implantation of Ge[sup +] Ions into SiO[sub 2] Films with Subsequent Annealing under Hydrostatic Pressure.
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- Semiconductors, 2003, v. 37, n. 4, p. 462, doi. 10.1134/1.1568469
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- Article
Exciton Recombination in δ-Doped Type-II GaAs/AlAs Superlattices.
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- Semiconductors, 2002, v. 36, n. 4, p. 461, doi. 10.1134/1.1469196
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- Article
Changes in the Density of Nonradiative Recombination Centers in GaAs/AlGaAs Quantum-Well Structures as a Result of Treatment in CF[sub 4] Plasma.
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- Semiconductors, 2002, v. 36, n. 1, p. 81, doi. 10.1134/1.1434518
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- Article
The Role of Nitrogen in the Formation of Luminescent Silicon Nanoprecipitates during Heat Treatment of SiO[sub 2] Layers Implanted with Si[sup +] ions.
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- Semiconductors, 2001, v. 35, n. 10, p. 1182, doi. 10.1134/1.1410661
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- Article
Photoluminescence Kinetics in GaAs under the Influence of Surface Acoustic Waves.
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- Semiconductors, 2001, v. 35, n. 8, p. 895, doi. 10.1134/1.1393023
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- Article
Optical Properties of Germanium Monolayers on Silicon.
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- Semiconductors, 2001, v. 35, n. 8, p. 941, doi. 10.1134/1.1393031
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- Article
Study of Photoluminescence of SiO[sub x]N[sub y] Films Implanted with Ge[sup +] Ions and Annealed under the Conditions of Hydrostatic Pressure.
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- Semiconductors, 2001, v. 35, n. 2, p. 125, doi. 10.1134/1.1349916
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- Article
Photoresistance of Si/Ge/Si Structures with Germanium Quantum Dots.
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- Semiconductors, 2000, v. 34, n. 11, p. 1311, doi. 10.1134/1.1325429
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- Article
Recombination of Self-Trapped Excitons in Silicon Nanocrystals Grown in Silicon Oxide.
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- Semiconductors, 2000, v. 34, n. 10, p. 1203, doi. 10.1134/1.1317584
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- Article
The Influence of Irradiation and Subsequent Annealing on Si Nanocrystals Formed in SiO[sub 2] Layers.
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- Semiconductors, 2000, v. 34, n. 8, p. 965, doi. 10.1134/1.1188109
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- Article
Transformation of nonradiative recombination centers in GaAs/AlGaAs quantum well structures upon treatment in a CF[sub 4] plasma followed by low-temperature annealing.
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- Semiconductors, 1998, v. 32, n. 12, p. 1293, doi. 10.1134/1.1187617
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- Article
Effect of ion dose and annealing mode on photoluminescence from SiO[sub 2] implanted with Si ions.
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- Semiconductors, 1998, v. 32, n. 11, p. 1222, doi. 10.1134/1.1187595
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- Article
A new recombination center in heavily doped GaAs : Zn grown by liquid-phase epitaxy.
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- Semiconductors, 1998, v. 32, n. 10, p. 1057, doi. 10.1134/1.1187565
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- Article
Properties of manganese-doped gallium arsenide layers grown by liquid phase epitaxy from a bismuth melt
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- Semiconductors, 1998, v. 32, n. 7, p. 704, doi. 10.1134/1.1187488
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- Article
Manganese-related recombination centers in epitaxial GaAs grown from a bismuth melt
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- Semiconductors, 1998, v. 32, n. 1, p. 43, doi. 10.1134/1.1187366
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- Article
Annihilation of nonradiative recombination centers in GaAs/AlGaAs multiquantum well structures as a result of exposure to plasma.
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- Semiconductors, 1997, v. 31, n. 12, p. 1241, doi. 10.1134/1.1187303
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- Article
Photoluminescence of SiO[sub 2] layers implanted with Si[sup +] ions and annealed in a pulsed regime.
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- Semiconductors, 1997, v. 31, n. 6, p. 626, doi. 10.1134/1.1187231
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- Article
Photoluminescence of Cd S nanoparticles grown on carbon nanotubes covered by a dielectric polymer layer.
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- Physica Status Solidi (B), 2013, v. 250, n. 12, p. 2759, doi. 10.1002/pssb.201300500
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- Article
Symmetry of electron states and optical transitions in GaN/AlN hexagonal quantum dots.
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- Physica Status Solidi (B), 2004, v. 241, n. 13, p. 2938, doi. 10.1002/pssb.200402070
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- Article
Influence of substrate temperature on the morphology of silicon oxide nanowires synthesized using a tin catalyst.
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- Physica Status Solidi. A: Applications & Materials Science, 2016, v. 213, n. 7, p. 1790, doi. 10.1002/pssa.201532960
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- Article
Synthesis of silicon oxide nanowires by the GJ EBP CVD method using different diluent gases.
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- Physica Status Solidi. A: Applications & Materials Science, 2016, v. 213, n. 7, p. 1774, doi. 10.1002/pssa.201532955
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- Article
Surface Polaritons in Silicon-Doped Aluminum and Gallium Nitride Films.
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- Optics & Spectroscopy, 2019, v. 127, n. 1, p. 36, doi. 10.1134/S0030400X19070208
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- Article