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- Title
Doping of Sn transition metal in CuSe thin films and its effect on structural evolvement and opto-electrical properties.
- Authors
Helan, P.; Mohanraj, K.; Sivakumar, G.
- Abstract
In the present work, effect of Sn doping in CuSe thin films is studied by the changes observed in their structural, morphological, optical and electrical properties by XRD, HRTEM, UV-Visible spectroscopy and I-V analysis. The XRD patterns confirm the incorporation of Sn in CuSe thin films through binary to ternary phase transformations. HRTEM images depict the layered formation of thin films and the SAED patterns supports the XRD data. The addition of Sn in CuSe tunes its band gap from 1.54 to 1.34 eV. Doping of Sn decreases the value of conductivity. CuSe thin films with the Sn ratio of 1 exhibit highly desirable optical and electrical properties.
- Subjects
SEMICONDUCTOR thin films; SELENIDES; SEMICONDUCTOR doping; COPPER compounds; TRANSITION metals; TIN; OPTOELECTRONICS
- Publication
Applied Physics A: Materials Science & Processing, 2016, Vol 122, Issue 8, p1
- ISSN
0947-8396
- Publication type
Article
- DOI
10.1007/s00339-016-0249-7