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- Title
Luminescence Properties of Si Nanocrystals Fabricated by Ion Beam Sputtering and Annealing.
- Authors
Sung Kim; Dong Hee Shin; Dong Yeol Shin; Chang Oh Kim; Jae Hee Park; Seung Bum Yang; Suk-Ho Choi; Seung Jo Yoo; Jin-Gyu Kim
- Abstract
During the past several decades, Si nanocrystals (NCs) have received remarkable attention in view of potential optoelectronic device applications. This paper summarizes recent progress in the study of luminescence from Si NCs, such as photoluminescence (PL), cathodoluminescence, time-solved PL, and electroluminescence. The paper is especially focused on Si NCs produced by ion beam sputtering deposition of SiOx single layer or SiOx/SiO2 multilayers and subsequent annealing. The effects of stoichiometry (x) and thickness of SiOx layers on the luminescence are analyzed in detail and discussed based on possible mechanisms.
- Subjects
SILICON; LUMINESCENCE; ION bombardment; SPUTTERING (Physics); ANNEALING of metals
- Publication
Journal of Nanomaterials, 2012, p1
- ISSN
1687-4110
- Publication type
Article
- DOI
10.1155/2012/572746